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Supply original PMV100EPA, Automotive MOSFETs, by Nexperia

Supply original PMV100EPA, Automotive MOSFETs, by Nexperia | TrustCompo Electronic

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Part Number
PMV100EPA
Internal code
TCE000018153
Package
SOT23
Serise
-
key Attributes
-
Description
-
Min Quantity
1
Manufacturer
Nexperia
Category
Automotive qualified products
Sub Categroy
Automotive MOSFETs
Datasheet
-

Availability

In Stock1,000,000,456
Avaliable1,000,000,422

Price Range

No Data Yet

Due to different local policies, please contact us for the latest quotation.

Certified Quality Assurance
Responsive 24/7 Support
Free Shipping & Sample Provision
30-Day Return Policy

We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.

Overview

Automotive qualified P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Export Classifications & Environmental

RoHS
Compliant
RHF-indicator
Yes
Orderable Part Number
PMV100EPAR (934661097215)
Chemical Content
PMV100EPA

Product Attribute

Nr of transistors
1
Number of Transistors
1
Tj [max] (°C)
175
Product status
Production
Manufacturer
Nexperia
QG(tot) [typ] @ VGS = 10 V (nC)
11.0
Nr of transistors
1.0
QGD [typ] (nC)
2.4
Qr [typ] (nC)
13.0
VGS [max] (V)
20.0
RDSon [max] @ Tj = 175 °C (mΩ)
276.0
RDSon [typ] @ VGS = 10 V (mΩ)
100.0
RDSon [max] @ VGS = 10 V (mΩ)
130.0
RDSon [typ] @ VGS = 4.5 V (mΩ)
130.0
Package name
SOT23
Tj [max] (°C)
175.0
Automotive qualified
Y
integrated gate-source ESD protection diodes
N
Ptot [max] (W)
0.71
Ptot [max] (W)
1.3
Coss [typ] (pF)
41.0
VGSth [max] @25 C (V)
-3.2
VDS [max] (V)
-60
VGSth [typ] (V)
-2.5
RDSon [max] @ VGS = 4.5 V; @25 C (mΩ)
180.0
Ciss [typ] (pF)
616.0
Release date
2020-04-16
ID [max] (A)
-2.2
ID [max] @ T = 100 °C (A)
-1.4
IDM [max] (A)
-9.0
VDS [max] (V)
-60.0
VGSth @25 C [min] (V)
-1.9
Max Junction Temperature
175 °C
Automotive qualified
Yes (AEC-Q101)
Gate-Source Threshold Voltage
-2.5 V
Reverse Recovery Charge
13 nC
Max On-State Resistance @ VGS=10V
130 mΩ
Gate-Drain Charge
2.4 nC
Max On-State Resistance @ VGS=4.5V
180 mΩ
Max Drain-Source Voltage
-60 V
Total Gate Charge @ VGS=10V
11 nC
Input Capacitance
616 pF
Output Capacitance
41 pF
Max Power Dissipation
1.3 W
Max Drain Current
-2.2 A
Temperature Range
Extended (Tj = 175 °C)
Technology
Trench MOSFET
Qualification
AEC-Q101 qualified
Package name
SOT23 (TO-236AB)

Product Parameter

Channel Type
P-Channel
Channel Type
P
Compatibility
Logic-level compatible
Switching Speed
Very fast switching

Package Parameter

Wave Soldering
WAVE_BG-BD-1
Reflow Soldering
REFLOW_BG-BD-1
Packing
SOT23_215
Marking
%GP

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