Supply original MR25H40CDC, Toggle MRAM, by Everspin Technologies

Supply original MR25H40CDC, Toggle MRAM, by Everspin Technologies | TrustCompo Electronic

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Part Number
MR25H40CDC
Internal code
TCE000012977
Package
DFN
Serise
MR2xH40
key Attributes
-
Description
MRAM 4Mbit Serial-SPI Interface 3.3V
Min Quantity
1
Manufacturer
Everspin Technologies
Category
MRAM
Sub Categroy
Toggle MRAM
Datasheet
-

Availability

In Stock1,000,000,464
Avaliable1,000,000,875

Price Range

QualityUnit Price
1

Due to different local policies, please contact us for the latest quotation.

Certified Quality Assurance
Responsive 24/7 Support
Free Shipping & Sample Provision
30-Day Return Policy

We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.

Overview

The MR25H40 is the ideal memory for applications that must store and retrieve data and programs quickly using a minimum number of pins.
  • AEC-Q100 Grade 1 Qualified options available.
  • 40MHz Read/Write speed with unlimited endurance.
  • Data non-volatile with 20 years retention.
  • Data retained on power loss.
  • RoHS compliant packages.

Export Classifications & Environmental

Automotive
NO
PPAP
NO
EU RoHS
Compliant
ECCN (US)
EAR99

Product Attribute

Max. Access Time (ns)
9
Pin Count
8
Data Bus Width (bit)
8
Operating Current (mA)
42
Chip Density (bit)
4M
Part Status
NRND
Temperature Range
-40°C to +85°C
Interface Type
Serial-SPI
Organization
512Kx8
Operating Voltage (V)
3.3 (3 to 3.6)

Package Parameter

Lead Shape
NO LEAD
Package Dimensions
6.1 x 5.1 x 0.95 mm (Max)
Supplier Package
DFN EP

Articles

This guide provides a direct comparison of HBM generations (up to HBM3e), analyzes the market landscape dominated by SK Hynix, Samsung, and Micron, and offers a crucial procurement checklist. It concludes with a practical case study, advising on capacity and bandwidth requirements (e.g., for a 175B parameter LLM), ensuring businesses can make informed decisions for their high-performance AI systems.

The Nexperia geopolitical crisis, involving legal takeover and counter-sanctions, poses the most severe recent risk to the global semiconductor supply chain, demanding immediate analysis of supply bottlenecks and price impacts for all component buyers.

With its unique properties of radiation hardening, unlimited read/write endurance, and low power consumption, MRAM is becoming the preferred choice for next-generation aerospace memory. This article will provide an in-depth analysis of MRAM's key advantages and applications in the aerospace field.

Comprehensive overview of MR25H40CDF SPI MRAM: specs, applications, case studies, and our real-stock advantages.