Supply original PSMN1R0-40YLD, ASFETs for Battery Systems and eFuse, by Nexperia

Supply original PSMN1R0-40YLD, ASFETs for Battery Systems and eFuse, by Nexperia | TrustCompo Electronic

Pictures are for reference only. Please contact us for the latest pictures.

Part Number
PSMN1R0-40YLD
Internal code
TCE000022772
Package
SOT1023
Serise
-
key Attributes
-
Description
-
Min Quantity
1
Manufacturer
Nexperia
Category
MOSFETs
Sub Categroy
ASFETs for Battery Systems and eFuse
Datasheet
-

Availability

In Stock1,000,000,273
Avaliable1,000,000,790

Price Range

No Data Yet

Due to different local policies, please contact us for the latest quotation.

Certified Quality Assurance
Responsive 24/7 Support
Free Shipping & Sample Provision
30-Day Return Policy

We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.

Product Attribute

Nr of transistors
1
VDS [max] (V)
40
Tj [max] (°C)
150
ID [max] (A)
280
Qr [typ] (nC)
67
RDSon [max] @ VGS = 4.5 V; @25 C (mΩ)
1.4
Product status
Production
Manufacturer
Nexperia
ID [max] (A)
280.0
QG(tot) [typ] @ VGS = 10 V (nC)
127
Qr [typ] (nC)
67.0
VGSth [typ] (V)
1.7
Ptot [max] (W)
198.0
ID [max] @ T = 100 °C (A)
198.0
RDSon [typ] @ VGS = 4.5 V (mΩ)
1.1
RDSon [max] @ VGS = 10 V (mΩ)
1.1
Automotive qualified
N
Rth(j-mb) [max] (K/W)
0.63
QGD [typ] (nC)
17.0
QG(tot) [typ] @ VGS = 4.5 V (nC)
59.0
Package name
LFPAK56E; Power-SO8
QG(tot) [typ] @ VGS = 10 V (nC)
127.0
RDSon [typ] @ VGS = 10 V (mΩ)
0.93
ID [max] @ T = 100 °C (A)
198
Ptot [max] (W)
198
Coss [typ] (pF)
1878
Ciss [typ] (pF)
8845
EDS(AL)S [max] (mJ)
578
Release date
2013-06-26
IDM [max] (A)
1284
IDM [max] (A)
1284.0

Product Parameter

Channel Type
N

Articles

This guide provides a direct comparison of HBM generations (up to HBM3e), analyzes the market landscape dominated by SK Hynix, Samsung, and Micron, and offers a crucial procurement checklist. It concludes with a practical case study, advising on capacity and bandwidth requirements (e.g., for a 175B parameter LLM), ensuring businesses can make informed decisions for their high-performance AI systems.

The Nexperia geopolitical crisis, involving legal takeover and counter-sanctions, poses the most severe recent risk to the global semiconductor supply chain, demanding immediate analysis of supply bottlenecks and price impacts for all component buyers.

With its unique properties of radiation hardening, unlimited read/write endurance, and low power consumption, MRAM is becoming the preferred choice for next-generation aerospace memory. This article will provide an in-depth analysis of MRAM's key advantages and applications in the aerospace field.

Comprehensive overview of MR25H40CDF SPI MRAM: specs, applications, case studies, and our real-stock advantages.