Supply original PSMN0R9-30ULD, ASFETs for Battery Systems and eFuse, by Nexperia

Supply original PSMN0R9-30ULD, ASFETs for Battery Systems and eFuse, by Nexperia | TrustCompo Electronic

Pictures are for reference only. Please contact us for the latest pictures.

Part Number
PSMN0R9-30ULD
Internal code
TCE000022769
Package
SOT1023A
Serise
-
key Attributes
-
Description
-
Min Quantity
1
Manufacturer
Nexperia
Category
MOSFETs
Sub Categroy
ASFETs for Battery Systems and eFuse
Datasheet
-

Availability

In Stock1,000,000,916
Avaliable1,000,000,214

Price Range

No Data Yet

Due to different local policies, please contact us for the latest quotation.

Certified Quality Assurance
Responsive 24/7 Support
Free Shipping & Sample Provision
30-Day Return Policy

We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.

Product Attribute

Nr of transistors
1
VDS [max] (V)
30
Tj [max] (°C)
150
ID [max] (A)
300
Qr [typ] (nC)
67
Product status
Production
Manufacturer
Nexperia
Ptot [max] (W)
227
Qr [typ] (nC)
67.0
ID [max] (A)
300.0
VGSth [typ] (V)
1.5
Automotive qualified
N
QG(tot) [typ] @ VGS = 4.5 V (nC)
51.0
QG(tot) [typ] @ VGS = 10 V (nC)
109.0
Rth(j-mb) [max] (K/W)
0.55
RDSon [typ] @ VGS = 4.5 V (mΩ)
0.79
RDSon [max] @ VGS = 10 V (mΩ)
0.87
QGD [typ] (nC)
13.5
ID [max] @ T = 100 °C (A)
284.0
RDSon [max] @ VGS = 4.5 V; @25 C (mΩ)
1.09
RDSon [typ] @ VGS = 10 V (mΩ)
0.65
ID [max] @ T = 100 °C (A)
284
QG(tot) [typ] @ VGS = 10 V (nC)
109
Ciss [typ] (pF)
7668
Release date
2017-12-06
Package name
LFPAK56-UL2595
Coss [typ] (pF)
2914
IDM [max] (A)
1592
EDS(AL)S [max] (mJ)
2575
IDM [max] (A)
1592.0
Ptot [max] (W)
227.0

Product Parameter

Channel Type
N

Articles

This guide provides a direct comparison of HBM generations (up to HBM3e), analyzes the market landscape dominated by SK Hynix, Samsung, and Micron, and offers a crucial procurement checklist. It concludes with a practical case study, advising on capacity and bandwidth requirements (e.g., for a 175B parameter LLM), ensuring businesses can make informed decisions for their high-performance AI systems.

The Nexperia geopolitical crisis, involving legal takeover and counter-sanctions, poses the most severe recent risk to the global semiconductor supply chain, demanding immediate analysis of supply bottlenecks and price impacts for all component buyers.

With its unique properties of radiation hardening, unlimited read/write endurance, and low power consumption, MRAM is becoming the preferred choice for next-generation aerospace memory. This article will provide an in-depth analysis of MRAM's key advantages and applications in the aerospace field.

Comprehensive overview of MR25H40CDF SPI MRAM: specs, applications, case studies, and our real-stock advantages.