Supply original IXFH14N60P, Transistors - FETs, MOSFETs - Single, by IXYS

Supply original IXFH14N60P, Transistors - FETs, MOSFETs - Single, by IXYS | TrustCompo Electronic

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Part Number
IXFH14N60P
Internal code
TCE000012925
Package
TO-247
Serise
HiPerFET™, PolarHT™
key Attributes
-
Description
MOSFET N-CH 600V 14A TO-247
Min Quantity
1
Manufacturer
IXYS
Category
Discrete Semiconductor Products
Sub Categroy
Transistors - FETs, MOSFETs - Single
Datasheet
-

Availability

In Stock363,499
Avaliable505,899

Price Range

QualityUnit Price
1
10
30
100
500
1,000

Due to different local policies, please contact us for the latest quotation.

Certified Quality Assurance
Responsive 24/7 Support
Free Shipping & Sample Provision
30-Day Return Policy

We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.

Product Attribute

Part Status
Active
Termination
Through Hole
Mount
Through Hole
Mounting Type
Through Hole
Pbfree Code
Yes
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Packaging
Tube
Published
2006
Pin Count
3
Number of Pins
3
Number of Terminations
3
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
600V
Voltage - Rated DC
600V
Current Rating
14A
Continuous Drain Current (ID)
14A
Factory Lead Time
30 Weeks
Threshold Voltage
5.5V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Width
5.3mm
Drain-source On Resistance-Max
0.55Ohm
Element Configuration
Single
Length
16.26mm
Drive Voltage (Max Rds On,Min Rds On)
10V
Fall Time (Typ)
26 ns
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Additional Feature
AVALANCHE RATED
Nominal Vgs
5.5 V
Manufacturer
IXYS
Pulsed Drain Current-Max (IDM)
42A
Power Dissipation
300W
Power Dissipation-Max
300W Tc
Vgs (Max)
±30V
Current - Continuous Drain (Id) @ 25°C
14A Tc
Series
HiPerFET™, PolarHT™
Input Capacitance (Ciss) (Max) @ Vds
2500pF @ 25V
Vgs(th) (Max) @ Id
5.5V @ 2.5mA
Rds On (Max) @ Id, Vgs
550m Ω @ 7A, 10V
JEDEC-95 Code
TO-247AD
Package / Case
TO-247-3
Avalanche Energy Rating (Eas)
900 mJ
Height
21.46mm
Gate Charge (Qg) (Max) @ Vgs
36nC @ 10V
Manufacturer's Part No.
IXFH14N60P

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-609 Code
e1
HTSUS
8541.29.0095

Product Parameter

Number of Elements
1
Dual Supply Voltage
600V
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Turn-Off Delay Time
70 ns
Reverse Recovery Time
200 ns
Turn On Delay Time
23 ns
Rise Time
27ns

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