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Supply original IRF640NPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

Supply original IRF640NPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo Electronic

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Part Number
IRF640NPBF
Internal code
TCE000012924
Package
TO-
Serise
HEXFET®
key Attributes
-
Description
MOSFET N-CH 200V 18A TO-220AB
Min Quantity
1
Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products
Sub Categroy
Transistors - FETs, MOSFETs - Single
Datasheet
-

Availability

In Stock158,101
Avaliable212,345

Price Range

QualityUnit Price
1
10
30
100
500
1,000

Due to different local policies, please contact us for the latest quotation.

Certified Quality Assurance
Responsive 24/7 Support
Free Shipping & Sample Provision
30-Day Return Policy

We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.

Product Attribute

Contact Plating
Tin
Voltage - Rated DC
200V
Drain to Source Breakdown Voltage
200V
Part Status
Active
Radiation Hardening
NO
Mounting Type
Through Hole
Termination
Through Hole
Mount
Through Hole
REACH Status
REACH Unaffected
ECCN
EAR99
Packaging
Tube
Number of Terminations
3
Number of Pins
3
Factory Lead Time
12 Weeks
Published
1999
Reflow Temperature-Max (s)
30
Height
19.8mm
Width
4.826mm
Gate to Source Voltage (Vgs)
20V
Threshold Voltage
2V
Element Configuration
Single
Lead Free
Contains Lead, Lead Free
Peak Reflow Temperature (Cel)
250
Drive Voltage (Max Rds On,Min Rds On)
10V
Length
10.668mm
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Max Junction Temperature (Tj)
175°C
Nominal Vgs
4 V
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(th) (Max) @ Id
4V @ 250μA
Pulsed Drain Current-Max (IDM)
72A
JEDEC-95 Code
TO-220AB
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Package / Case
TO-220-3
Current - Continuous Drain (Id) @ 25°C
18A Tc
Current Rating
18A
Continuous Drain Current (ID)
18A
Rds On (Max) @ Id, Vgs
150m Ω @ 11A, 10V
Fall Time (Typ)
5.5 ns
Input Capacitance (Ciss) (Max) @ Vds
1160pF @ 25V
Power Dissipation
150W
Avalanche Energy Rating (Eas)
247 mJ
Gate Charge (Qg) (Max) @ Vgs
67nC @ 10V
Power Dissipation-Max
150W Tc
Resistance
150mOhm
Manufacturer's Part No.
IRF640NPBF
Recovery Time
241 ns

Product Parameter

Dual Supply Voltage
200V
Number of Channels
1
Number of Elements
1
Rise Time
19ns
Turn On Delay Time
10 ns
Turn-Off Delay Time
23 ns

Export Classifications & Environmental

JESD-609 Code
e3
ECCN Code
EAR99
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
Moisture Sensitivity Level (MSL)
Not applicable
HTSUS
8541.29.0095

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