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Supply original IRFL4310TRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

Supply original IRFL4310TRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo Electronic

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Part Number
IRFL4310TRPBF
Internal code
TCE000012923
Package
SOT223
Serise
HEXFET®
key Attributes
-
Description
MOSFET N-CH 100V 1.6A SOT223
Min Quantity
1
Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products
Sub Categroy
Transistors - FETs, MOSFETs - Single
Datasheet
-

Availability

In Stock373,436
Avaliable609,816

Price Range

QualityUnit Price
1
10
30
100
500
1,000

Due to different local policies, please contact us for the latest quotation.

Certified Quality Assurance
Responsive 24/7 Support
Free Shipping & Sample Provision
30-Day Return Policy

We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.

Product Attribute

Contact Plating
Tin
Part Status
Active
Radiation Hardening
NO
REACH Status
REACH Unaffected
ECCN
EAR99
Number of Terminations
4
Lead Free
Lead Free
Mounting Type
Surface Mount
Mount
Surface Mount
Number of Pins
3
Factory Lead Time
12 Weeks
Published
1999
Reflow Temperature-Max (s)
30
Packaging
Tape & Reel (TR)
Drain to Source Breakdown Voltage
100V
Voltage - Rated DC
100V
Height
1.8mm
Drain Current-Max (Abs) (ID)
2.2A
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Width
3.7mm
Gate to Source Voltage (Vgs)
20V
Max Junction Temperature (Tj)
150°C
Threshold Voltage
2V
Element Configuration
Single
Fall Time (Typ)
20 ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Package / Case
TO-261-4, TO-261AA
Recovery Time
110 ns
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Nominal Vgs
4 V
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(th) (Max) @ Id
4V @ 250μA
Operating Temperature
-55°C~150°C TJ
Continuous Drain Current (ID)
1.6A
Current Rating
1.6A
Additional Feature
HIGH RELIABILITY
Power Dissipation
2.1W
Length
6.6802mm
Current - Continuous Drain (Id) @ 25°C
1.6A Ta
Input Capacitance (Ciss) (Max) @ Vds
330pF @ 25V
Power Dissipation-Max
1W Ta
Rds On (Max) @ Id, Vgs
200m Ω @ 1.6A, 10V
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Resistance
200mOhm
Manufacturer's Part No.
IRFL4310TRPBF

Export Classifications & Environmental

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
JESD-30 Code
R-PDSO-G4

Product Parameter

Number of Elements
1
Number of Channels
1
Min Breakdown Voltage
100V
Turn-Off Delay Time
34 ns
Turn On Delay Time
7.8 ns
Rise Time
18ns

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