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Supply original IRF1010NSTRLPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

Supply original IRF1010NSTRLPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo Electronic

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Part Number
IRF1010NSTRLPBF
Internal code
TCE000012922
Package
-
Serise
HEXFET®
key Attributes
-
Description
MOSFET N-CH 55V 85A D2PAK
Min Quantity
1
Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products
Sub Categroy
Transistors - FETs, MOSFETs - Single
Datasheet
-

Availability

In Stock166,558
Avaliable370,245

Price Range

QualityUnit Price
1
10
30
100
500
1,000

Due to different local policies, please contact us for the latest quotation.

Certified Quality Assurance
Responsive 24/7 Support
Free Shipping & Sample Provision
30-Day Return Policy

We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.

Product Attribute

Part Status
Active
Radiation Hardening
NO
Number of Terminations
2
REACH Status
REACH Unaffected
ECCN
EAR99
Mount
Surface Mount
Mounting Type
Surface Mount
Number of Pins
3
Factory Lead Time
12 Weeks
Reflow Temperature-Max (s)
30
Published
2002
Packaging
Tape & Reel (TR)
Termination
SMD/SMT
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Width
9.65mm
Height
4.826mm
Gate to Source Voltage (Vgs)
20V
Element Configuration
Single
Threshold Voltage
4V
Lead Free
Contains Lead, Lead Free
Recovery Time
100 ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Fall Time (Typ)
48 ns
Length
10.668mm
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Nominal Vgs
4 V
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(th) (Max) @ Id
4V @ 250μA
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain to Source Breakdown Voltage
55V
Voltage - Rated DC
55V
Gate Charge (Qg) (Max) @ Vgs
120nC @ 10V
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Drain Current-Max (Abs) (ID)
75A
JEDEC-95 Code
TO-252
Current Rating
85A
Continuous Drain Current (ID)
85A
Power Dissipation-Max
180W Tc
Pulsed Drain Current-Max (IDM)
290A
Manufacturer's Part No.
IRF1010NSTRLPBF
Avalanche Energy Rating (Eas)
250 mJ
Input Capacitance (Ciss) (Max) @ Vds
3210pF @ 25V
Power Dissipation
180W
Current - Continuous Drain (Id) @ 25°C
85A Tc
Rds On (Max) @ Id, Vgs
11m Ω @ 43A, 10V

Export Classifications & Environmental

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095

Product Parameter

Number of Elements
1
Turn-Off Delay Time
39 ns
Turn On Delay Time
13 ns
Rise Time
76ns
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Dual Supply Voltage
55V

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