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Supply original FQP17P10, Transistors - FETs, MOSFETs - Single, by ON Semiconductor

Supply original FQP17P10, Transistors - FETs, MOSFETs - Single, by ON Semiconductor | TrustCompo Electronic

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Part Number
FQP17P10
Internal code
TCE000012911
Package
TO-220
Serise
QFET®
key Attributes
-
Description
MOSFET P-CH 100V 16.5A TO-220
Min Quantity
1
Manufacturer
ON Semiconductor
Category
Discrete Semiconductor Products
Sub Categroy
Transistors - FETs, MOSFETs - Single
Datasheet
-

Availability

In Stock753,343
Avaliable802,666

Price Range

QualityUnit Price
1
10
30
100
500
1,000

Due to different local policies, please contact us for the latest quotation.

Certified Quality Assurance
Responsive 24/7 Support
Free Shipping & Sample Provision
30-Day Return Policy

We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.

Export Classifications & Environmental

JESD-609 Code
e3
ECCN Code
EAR99
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
Moisture Sensitivity Level (MSL)
Not applicable
HTSUS
8541.29.0095

Product Parameter

Number of Elements
1
Number of Channels
1
Drain to Source Voltage (Vdss)
100V
Rise Time
200ns
Turn-Off Delay Time
45 ns
Turn On Delay Time
17 ns
Dual Supply Voltage
-100V

Product Attribute

Contact Plating
Tin
Part Status
Active
Radiation Hardening
NO
Mounting Type
Through Hole
Termination
Through Hole
Mount
Through Hole
Pbfree Code
Yes
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Pitch
2.54mm
Lead Free
Lead Free
Packaging
Tube
Factory Lead Time
9 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Number of Terminations
3
Number of Pins
3
Gate to Source Voltage (Vgs)
30V
Published
1999
Width
4.7mm
Length
10.1mm
Element Configuration
Single
Height
20.4mm
Fall Time (Typ)
100 ns
Manufacturer
ON Semiconductor
Drive Voltage (Max Rds On,Min Rds On)
10V
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
Max Junction Temperature (Tj)
175°C
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(th) (Max) @ Id
4V @ 250μA
FET Type
P-Channel
Subcategory
Other Transistors
Nominal Vgs
-4 V
Threshold Voltage
-4V
JEDEC-95 Code
TO-220AB
Package / Case
TO-220-3
Power Dissipation
100W
Drain to Source Breakdown Voltage
-100V
Voltage - Rated DC
-100V
Weight
1.8g
Current Rating
-16.5A
Continuous Drain Current (ID)
-16.5A
Series
QFET®
Vgs (Max)
±30V
Rds On (Max) @ Id, Vgs
190m Ω @ 8.25A, 10V
Pulsed Drain Current-Max (IDM)
66A
Input Capacitance (Ciss) (Max) @ Vds
1100pF @ 25V
Current - Continuous Drain (Id) @ 25°C
16.5A Tc
Gate Charge (Qg) (Max) @ Vgs
39nC @ 10V
Resistance
190MOhm
Power Dissipation-Max
100W Tc
Manufacturer's Part No.
FQP17P10
Avalanche Energy Rating (Eas)
580 mJ

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