Supply original FDB8441, Transistors - FETs, MOSFETs - Single, by ON Semiconductor

Supply original FDB8441, Transistors - FETs, MOSFETs - Single, by ON Semiconductor | TrustCompo Electronic

Pictures are for reference only. Please contact us for the latest pictures.

Part Number
FDB8441
Internal code
TCE000012905
Package
-
Serise
PowerTrench®
key Attributes
-
Description
MOSFET N-CH 40V 80A D2PAK
Min Quantity
1
Manufacturer
ON Semiconductor
Category
Discrete Semiconductor Products
Sub Categroy
Transistors - FETs, MOSFETs - Single
Datasheet
-

Availability

In Stock561,232
Avaliable851,186

Price Range

QualityUnit Price
1
10
30
100
500
1,000

Due to different local policies, please contact us for the latest quotation.

Certified Quality Assurance
Responsive 24/7 Support
Free Shipping & Sample Provision
30-Day Return Policy

We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.

Product Attribute

Part Status
Active
Number of Terminations
2
Number of Pins
2
Pbfree Code
Yes
REACH Status
REACH Unaffected
ECCN
EAR99
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Lead Free
Lead Free
Mount
Surface Mount
Mounting Type
Surface Mount
Published
2006
Factory Lead Time
8 Weeks
Packaging
Tape & Reel (TR)
Termination
SMD/SMT
Terminal Form
GULL WING
Reach Compliance Code
not_compliant
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reflow Temperature-Max (s)
NOT SPECIFIED
Width
9.65mm
Qualification Status
Not Qualified
Height
4.83mm
Length
10.67mm
Gate to Source Voltage (Vgs)
20V
Element Configuration
Single
Drain to Source Breakdown Voltage
40V
Voltage - Rated DC
40V
Manufacturer
ON Semiconductor
Drive Voltage (Max Rds On,Min Rds On)
10V
Threshold Voltage
2.8V
Resistance
2.5mOhm
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(th) (Max) @ Id
4V @ 250μA
Continuous Drain Current (ID)
28A
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Series
PowerTrench®
Current - Continuous Drain (Id) @ 25°C
28A Ta 120A Tc
Nominal Vgs
2.8 V
Input Capacitance (Ciss) (Max) @ Vds
15000pF @ 25V
Avalanche Energy Rating (Eas)
947 mJ
Weight
1.31247g
Fall Time (Typ)
17.9 ns
Power Dissipation
300W
Rds On (Max) @ Id, Vgs
2.5m Ω @ 80A, 10V
Current Rating
80A
Manufacturer's Part No.
FDB8441
Gate Charge (Qg) (Max) @ Vgs
280nC @ 10V
Power Dissipation-Max
300W Tc

Export Classifications & Environmental

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095

Product Parameter

Number of Elements
1
Turn-Off Delay Time
75 ns
Dual Supply Voltage
40V
Terminal Finish
Tin (Sn)
Turn On Delay Time
23 ns
Rise Time
24ns
Reverse Recovery Time
52 ns

Articles

With its unique properties of radiation hardening, unlimited read/write endurance, and low power consumption, MRAM is becoming the preferred choice for next-generation aerospace memory. This article will provide an in-depth analysis of MRAM's key advantages and applications in the aerospace field.

Comprehensive overview of MR25H40CDF SPI MRAM: specs, applications, case studies, and our real-stock advantages.

Key developments and expert insights in the global electronic components industry for the fourth week of June 2025.