Supply original FDB13AN06A0, Transistors - FETs, MOSFETs - Single, by ON Semiconductor

Supply original FDB13AN06A0, Transistors - FETs, MOSFETs - Single, by ON Semiconductor | TrustCompo Electronic

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Part Number
FDB13AN06A0
Internal code
TCE000012904
Package
TO-
Serise
PowerTrench®
key Attributes
-
Description
MOSFET N-CH 60V 62A TO-263AB
Min Quantity
1
Manufacturer
ON Semiconductor
Category
Discrete Semiconductor Products
Sub Categroy
Transistors - FETs, MOSFETs - Single
Datasheet
-

Availability

In Stock389,454
Avaliable542,320

Price Range

QualityUnit Price
1
10
30
100
500
1,000

Due to different local policies, please contact us for the latest quotation.

Certified Quality Assurance
Responsive 24/7 Support
Free Shipping & Sample Provision
30-Day Return Policy

We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.

Product Attribute

Contact Plating
Tin
Part Status
Active
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Number of Terminations
2
Pbfree Code
Yes
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Mount
Surface Mount
Number of Pins
3
Factory Lead Time
8 Weeks
Published
2003
Packaging
Tape & Reel (TR)
Termination
SMD/SMT
Terminal Form
GULL WING
Reach Compliance Code
not_compliant
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Height
4.83mm
Length
10.67mm
Gate to Source Voltage (Vgs)
20V
Element Configuration
Single
Threshold Voltage
4V
Manufacturer
ON Semiconductor
Fall Time (Typ)
26 ns
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Nominal Vgs
4 V
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(th) (Max) @ Id
4V @ 250μA
Voltage - Rated DC
60V
Drain to Source Breakdown Voltage
60V
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Resistance
13.5MOhm
Series
PowerTrench®
Weight
1.31247g
Continuous Drain Current (ID)
62A
Current Rating
62A
Power Dissipation-Max
115W Tc
Input Capacitance (Ciss) (Max) @ Vds
1350pF @ 25V
Width
11.33mm
Current - Continuous Drain (Id) @ 25°C
10.9A Ta 62A Tc
Gate Charge (Qg) (Max) @ Vgs
29nC @ 10V
Manufacturer's Part No.
FDB13AN06A0
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Power Dissipation
115W
Rds On (Max) @ Id, Vgs
13.5m Ω @ 62A, 10V
Avalanche Energy Rating (Eas)
56 mJ

Export Classifications & Environmental

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095

Product Parameter

Number of Elements
1
Turn-Off Delay Time
24 ns
Dual Supply Voltage
60V
Turn On Delay Time
9 ns
Rise Time
96ns

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