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Request evaluation samplesSupply original FDN5618P, Transistors - FETs, MOSFETs - Single, by ON Semiconductor
FDN5618P is a Transistors - FETs, MOSFETs - Single model from ON Semiconductor, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to SSOT3 under the ON Semiconductor brand listing. MOSFET P-CH 60V 1.25A SSOT3. TrustCompo combines the available model, brand, hierarchy, and specification details around FDN5618P so buyers can move faster from review to quotation.
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Datasheet
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Key specifications
Series
PowerTrench®
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Category
Transistors - FETs, MOSFETs - SingleDescription
MOSFET P-CH 60V 1.25A SSOT3
key Attributes
-
Datasheet
View FDN5618P DatasheetTechnical document
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Product overview
Overview
The FDN5618P is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for various applications, including power management, switching, and signal amplification. Here’s a detailed description of its features and specifications:
Package and Configuration
- Package Type: The FDN5618P is typically housed in a compact SOT-23 package, which is a surface-mount device (SMD) that allows for efficient space utilization on printed circuit boards (PCBs).
- Pin Configuration: The device features three pins for each MOSFET, allowing for easy integration into circuits. The pinout is designed for straightforward connections, facilitating both source and drain access.
Electrical Characteristics
- N-Channel Configuration: As an N-channel MOSFET, the FDN5618P is optimized for low on-resistance and high-speed switching capabilities, making it suitable for low-side switching applications.
- Drain-Source Voltage (V_DS): The maximum drain-source voltage is typically rated at around 30V, allowing it to handle a variety of voltage levels in different applications.
- Continuous Drain Current (I_D): The device can handle a continuous drain current of up to 1.5A, making it suitable for moderate power applications.
- On-Resistance (R_DS(on)): The on-resistance is low, typically around 0.1 ohms at a gate-source voltage (V_GS) of 10V, which minimizes power loss during operation and enhances efficiency.
Thermal Characteristics
- Thermal Resistance: The FDN5618P has a thermal resistance rating that allows it to operate effectively without overheating, making it suitable for applications where heat dissipation is a concern.
- Operating Temperature Range: The device is designed to operate within a wide temperature range, typically from -55°C to +150°C, ensuring reliability in various environmental conditions.
Switching Performance
- Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically in the range of 1V to 3V, allowing for efficient switching with low gate drive requirements.
- Fast Switching Speed: The FDN5618P is capable of fast switching speeds, making it ideal for high-frequency applications such as PWM (Pulse Width Modulation) control.
Applications
The FDN5618P is suitable for a variety of applications, including:
- Power management circuits
- Load switching
- Motor control
- Battery management systems
- Signal switching in communication devices
Summary
In summary, the FDN5618P from ON Semiconductor is a versatile and efficient dual N-channel MOSFET that offers low on-resistance, high current handling, and fast switching capabilities. Its compact SOT-23 package and robust electrical characteristics make it an excellent choice for a wide range of electronic applications, particularly in power management and control systems.
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Popular Specs Surfaced First
Export Classifications & Environmental
JESD-609 Code
e3
Export Classifications & Environmental
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Export Classifications & Environmental
ECCN Code
EAR99
Export Classifications & Environmental
RoHS Status
ROHS3 Compliant
Export Classifications & Environmental
REACH SVHC
No SVHC
Export Classifications & Environmental
HTSUS
8541.21.0095
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.21.0095
Number Of Elements
1
Number Of Channels
1
Rise Time
8ns
Turn On Delay Time
6.5 ns
Dual Supply Voltage
-60V
Drain To Source Voltage (Vdss)
60V
Turn-Off Delay Time
16.5 ns
Contact Plating
Tin
Part Status
Active
Radiation Hardening
NO
Pbfree Code
Yes
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Length
2.92mm
Mount
Surface Mount
Mounting Type
Surface Mount
Number Of Terminations
3
Number Of Pins
3
Factory Lead Time
8 Weeks
Reflow Temperature-Max (S)
30
Packaging
Tape & Reel (TR)
Published
2000
Termination
SMD/SMT
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Width
1.4mm
Gate To Source Voltage (Vgs)
20V
Max Junction Temperature (Tj)
150°C
Element Configuration
Single
Manufacturer
ON Semiconductor
Power Dissipation
500mW
Fall Time (Typ)
8 ns
Height
1.22mm
Continuous Drain Current (ID)
1.2A
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Voltage - Rated DC
-60V
Drain To Source Breakdown Voltage
-60V
FET Type
P-Channel
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Subcategory
Other Transistors
Weight
30mg
Vgs(Th) (Max) @ Id
3V @ 250μA
Package / Case
TO-236-3, SC-59, SOT-23-3
Manufacturer'S Part No.
FDN5618P
Lifecycle Status
ACTIVE (Last Updated: 15 hours ago)
Series
PowerTrench®
Rds On (Max) @ Id, Vgs
170m Ω @ 1.25A, 10V
Nominal Vgs
20 V
Input Capacitance (Ciss) (Max) @ Vds
430pF @ 30V
Current Rating
-1.25A
Threshold Voltage
-1.6V
Gate Charge (Qg) (Max) @ Vgs
13.8nC @ 10V
Resistance
170mOhm
Current - Continuous Drain (Id) @ 25°C
1.25A Ta
Power Dissipation-Max
500mW Ta
Common questions
Product FAQ
Quick answers for buyers reviewing FDN5618P, stock, documentation, and sourcing steps.
What is FDN5618P?
FDN5618P is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for FDN5618P?
FDN5618P is listed with package reference SSOT3. The current product description is MOSFET P-CH 60V 1.25A SSOT3, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is FDN5618P available in stock?
This page currently shows 55201 units in stock and 43198 units available for FDN5618P. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for FDN5618P?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for FDN5618P by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for FDN5618P?
Yes. This page links to the datasheet for FDN5618P by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify FDN5618P before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for FDN5618P before approving the order.
Transistors - FETs, MOSFETs - Single
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