Supply original STD5N20LT4, Transistors - FETs, MOSFETs - Single, by STMicroelectronics

Supply original STD5N20LT4, Transistors - FETs, MOSFETs - Single, by STMicroelectronics | TrustCompo Electronic

Pictures are for reference only. Please contact us for the latest pictures.

Part Number
STD5N20LT4
Internal code
TCE000012862
Package
-
Serise
STripFET™
key Attributes
-
Description
MOSFET N-CH 200V 5A DPAK
Min Quantity
1
Manufacturer
STMicroelectronics
Category
Discrete Semiconductor Products
Sub Categroy
Transistors - FETs, MOSFETs - Single
Datasheet
-

Availability

In Stock225,985
Avaliable755,052

Price Range

QualityUnit Price
1
10
30
100
500
1,000

Due to different local policies, please contact us for the latest quotation.

Certified Quality Assurance
Responsive 24/7 Support
Free Shipping & Sample Provision
30-Day Return Policy

We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.

Product Attribute

Drain to Source Breakdown Voltage
200V
Voltage - Rated DC
200V
Part Status
Active
Radiation Hardening
NO
Number of Terminations
2
REACH Status
REACH Unaffected
ECCN
EAR99
Current Rating
5A
Continuous Drain Current (ID)
5A
Drain Current-Max (Abs) (ID)
5A
Lead Free
Lead Free
Mounting Type
Surface Mount
Mount
Surface Mount
Number of Pins
3
Pin Count
3
Reflow Temperature-Max (s)
30
Packaging
Tape & Reel (TR)
Termination
SMD/SMT
Width
6.2mm
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Drive Voltage (Max Rds On,Min Rds On)
5V
Length
6.6mm
Gate to Source Voltage (Vgs)
20V
Threshold Voltage
2.5V
Max Junction Temperature (Tj)
150°C
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Element Configuration
Single
Pulsed Drain Current-Max (IDM)
20A
Manufacturer
STMicroelectronics
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C
5A Tc
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Resistance
700mOhm
Base Part Number
STD5N
Manufacturer's Part No.
STD5N20LT4
Series
STripFET™
Gate Charge (Qg) (Max) @ Vgs
6nC @ 5V
Vgs(th) (Max) @ Id
2.5V @ 50μA
Power Dissipation-Max
33W Tc
Power Dissipation
33W
Fall Time (Typ)
15.5 ns
Nominal Vgs
2.5 V
Rds On (Max) @ Id, Vgs
700m Ω @ 2.5A, 5V
Height
2.63mm
Input Capacitance (Ciss) (Max) @ Vds
242pF @ 25V

Product Parameter

Dual Supply Voltage
200V
Number of Elements
1
Number of Channels
1
Terminal Finish
Matte Tin (Sn) - annealed
Turn-Off Delay Time
14 ns
Turn On Delay Time
11.5 ns
Rise Time
21.5ns

Export Classifications & Environmental

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095

Articles

With its unique properties of radiation hardening, unlimited read/write endurance, and low power consumption, MRAM is becoming the preferred choice for next-generation aerospace memory. This article will provide an in-depth analysis of MRAM's key advantages and applications in the aerospace field.

Comprehensive overview of MR25H40CDF SPI MRAM: specs, applications, case studies, and our real-stock advantages.

Key developments and expert insights in the global electronic components industry for the fourth week of June 2025.