Supply original STB120NF10T4, Transistors - FETs, MOSFETs - Single, by STMicroelectronics

Supply original STB120NF10T4, Transistors - FETs, MOSFETs - Single, by STMicroelectronics | TrustCompo Electronic

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Part Number
STB120NF10T4
Internal code
TCE000012854
Package
-
Serise
STripFET™ II
key Attributes
-
Description
MOSFET N-CH 100V 110A D2PAK
Min Quantity
1
Manufacturer
STMicroelectronics
Category
Discrete Semiconductor Products
Sub Categroy
Transistors - FETs, MOSFETs - Single
Datasheet
-

Availability

In Stock459,974
Avaliable883,940

Price Range

QualityUnit Price
1
10
30
100
500
1,000

Due to different local policies, please contact us for the latest quotation.

Certified Quality Assurance
Responsive 24/7 Support
Free Shipping & Sample Provision
30-Day Return Policy

We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.

Product Attribute

Contact Plating
Tin
Part Status
Active
Radiation Hardening
NO
Number of Terminations
2
REACH Status
REACH Unaffected
ECCN
EAR99
Pin Count
4
Lead Free
Lead Free
Mount
Surface Mount
Mounting Type
Surface Mount
Number of Pins
3
Factory Lead Time
12 Weeks
Reflow Temperature-Max (s)
30
Packaging
Tape & Reel (TR)
Voltage - Rated DC
100V
Drain to Source Breakdown Voltage
100V
Height
4.6mm
Termination
SMD/SMT
Width
9.35mm
Terminal Form
GULL WING
Length
10.4mm
Gate to Source Voltage (Vgs)
20V
Element Configuration
Single
Peak Reflow Temperature (Cel)
245
Threshold Voltage
4V
Weight
13.607771g
Drive Voltage (Max Rds On,Min Rds On)
10V
Manufacturer
STMicroelectronics
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Nominal Vgs
4 V
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(th) (Max) @ Id
4V @ 250μA
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Continuous Drain Current (ID)
110A
Current - Continuous Drain (Id) @ 25°C
110A Tc
Series
STripFET™ II
Current Rating
120A
Pulsed Drain Current-Max (IDM)
480A
Input Capacitance (Ciss) (Max) @ Vds
5200pF @ 25V
Fall Time (Typ)
68 ns
Manufacturer's Part No.
STB120NF10T4
Resistance
10.5mOhm
Avalanche Energy Rating (Eas)
550 mJ
Power Dissipation
312W
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Rds On (Max) @ Id, Vgs
10.5m Ω @ 60A, 10V
Power Dissipation-Max
312W Tc
Gate Charge (Qg) (Max) @ Vgs
233nC @ 10V
Base Part Number
STB120N

Export Classifications & Environmental

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095

Product Parameter

Number of Elements
1
Dual Supply Voltage
100V
Rise Time
90ns
Turn On Delay Time
25 ns
Turn-Off Delay Time
132 ns

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