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Supply original SIR422DP-T1-GE3, Transistors - FETs, MOSFETs - Single, by Vishay

SIR422DP-T1-GE3 is a Transistors - FETs, MOSFETs - Single model from Vishay, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. MOSFET N-CH 40V 40A PPAK SO-8. TrustCompo combines the available model, brand, hierarchy, and specification details around SIR422DP-T1-GE3 so buyers can move faster from review to quotation.

RoHS
Datasheet
Supply original SIR422DP-T1-GE3, Transistors - FETs, MOSFETs - Single, by Vishay | TrustCompo
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Documentation support

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Part Number

SIR422DP-T1-GE3

Internal code

TCE000012853

Package

-

Manufacturer

Vishay

Key specifications

Series

TrenchFET®

Min Quantity

1

Description

MOSFET N-CH 40V 40A PPAK SO-8

key Attributes

-

Technical document

Open The Official Datasheet

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View SIR422DP-T1-GE3 Datasheet

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Trust signals

Globally recognized certifications

4 certifications

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ISO 9001

Quality management processes for more consistent sourcing and handling.

AS9120B

Aerospace-focused distribution controls for traceability and reliability.

ISO 14001

Environmental management discipline across warehouse and operating workflows.

ESD Control

Electrostatic handling standards to help protect sensitive components.

Ordering workflow

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How to order this product

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2

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3

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Structured product content

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

Radiation Hardening

NO

Product Attribute

Pbfree Code

Yes

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Lead Free

Product Attribute

REACH Status

REACH Affected

Part Status
Active
Radiation Hardening
NO
Pbfree Code
Yes
ECCN
EAR99
Lead Free
Lead Free
REACH Status
REACH Affected
Mounting Type
Surface Mount
Mount
Surface Mount, Through Hole
Width
5.0038mm
Factory Lead Time
14 Weeks
Packaging
Tape & Reel (TR)
Published
2009
Reflow Temperature-Max (S)
40
Number Of Terminations
5
Pin Count
8
Number Of Pins
8
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Gate To Source Voltage (Vgs)
20V
Threshold Voltage
2.5V
Max Junction Temperature (Tj)
150°C
Element Configuration
Single
Drain To Source Breakdown Voltage
40V
Manufacturer
Vishay
Fall Time (Typ)
11 ns
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Pulsed Drain Current-Max (IDM)
70A
Current - Continuous Drain (Id) @ 25°C
40A Tc
Terminal Form
C BEND
Subcategory
FET General Purpose Powers
Length
5.969mm
Weight
506.605978mg
Nominal Vgs
1.2 V
Manufacturer'S Part No.
SIR422DP-T1-GE3
Series
TrenchFET®
Continuous Drain Current (ID)
40A
Vgs(Th) (Max) @ Id
2.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
48nC @ 10V
Power Dissipation-Max
5W Ta 34.7W Tc
Resistance
6.6mOhm
Power Dissipation
5W
Package / Case
PowerPAK® SO-8
Avalanche Energy Rating (Eas)
45 mJ
Drain Current-Max (Abs) (ID)
20.5A
Rds On (Max) @ Id, Vgs
6.6m Ω @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds
1785pF @ 20V
Height
1.12mm
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
JESD-30 Code
R-XDSO-C5
Number Of Elements
1
Number Of Channels
1
Terminal Finish
Matte Tin (Sn)
Turn On Delay Time
19 ns
Turn-Off Delay Time
28 ns
Rise Time
84ns

Common questions

Product FAQ

Quick answers for buyers reviewing SIR422DP-T1-GE3, stock, documentation, and sourcing steps.

What is SIR422DP-T1-GE3?

SIR422DP-T1-GE3 is a Transistors - FETs, MOSFETs - Single component from Vishay. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for SIR422DP-T1-GE3?

SIR422DP-T1-GE3 is listed with package reference -. The current product description is MOSFET N-CH 40V 40A PPAK SO-8, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is SIR422DP-T1-GE3 available in stock?

This page currently shows 160564 units in stock and 11799 units available for SIR422DP-T1-GE3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for SIR422DP-T1-GE3?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for SIR422DP-T1-GE3 by Vishay. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for SIR422DP-T1-GE3?

Yes. This page links to the datasheet for SIR422DP-T1-GE3 by Vishay, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify SIR422DP-T1-GE3 before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for SIR422DP-T1-GE3 before approving the order.

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