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Supply original SIR422DP-T1-GE3, Transistors - FETs, MOSFETs - Single, by Vishay

Supply original SIR422DP-T1-GE3, Transistors - FETs, MOSFETs - Single, by Vishay | TrustCompo Electronic

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Part Number
SIR422DP-T1-GE3
Internal code
TCE000012853
Package
-
Serise
TrenchFET®
key Attributes
-
Description
MOSFET N-CH 40V 40A PPAK SO-8
Min Quantity
1
Manufacturer
Vishay
Category
Discrete Semiconductor Products
Sub Categroy
Transistors - FETs, MOSFETs - Single
Datasheet
-

Availability

In Stock462,160
Avaliable398,747

Price Range

QualityUnit Price
1
10
30
100
500
1,000

Due to different local policies, please contact us for the latest quotation.

Certified Quality Assurance
Responsive 24/7 Support
Free Shipping & Sample Provision
30-Day Return Policy

We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.

Product Attribute

Part Status
Active
Radiation Hardening
NO
Pbfree Code
Yes
ECCN
EAR99
Lead Free
Lead Free
REACH Status
REACH Affected
Mounting Type
Surface Mount
Mount
Surface Mount, Through Hole
Width
5.0038mm
Factory Lead Time
14 Weeks
Packaging
Tape & Reel (TR)
Published
2009
Reflow Temperature-Max (s)
40
Number of Terminations
5
Pin Count
8
Number of Pins
8
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Gate to Source Voltage (Vgs)
20V
Threshold Voltage
2.5V
Max Junction Temperature (Tj)
150°C
Element Configuration
Single
Drain to Source Breakdown Voltage
40V
Manufacturer
Vishay
Fall Time (Typ)
11 ns
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Pulsed Drain Current-Max (IDM)
70A
Current - Continuous Drain (Id) @ 25°C
40A Tc
Terminal Form
C BEND
Subcategory
FET General Purpose Powers
Length
5.969mm
Weight
506.605978mg
Nominal Vgs
1.2 V
Manufacturer's Part No.
SIR422DP-T1-GE3
Series
TrenchFET®
Continuous Drain Current (ID)
40A
Vgs(th) (Max) @ Id
2.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
48nC @ 10V
Power Dissipation-Max
5W Ta 34.7W Tc
Resistance
6.6mOhm
Power Dissipation
5W
Package / Case
PowerPAK® SO-8
Avalanche Energy Rating (Eas)
45 mJ
Drain Current-Max (Abs) (ID)
20.5A
Rds On (Max) @ Id, Vgs
6.6m Ω @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds
1785pF @ 20V
Height
1.12mm

Export Classifications & Environmental

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
JESD-30 Code
R-XDSO-C5

Product Parameter

Number of Elements
1
Number of Channels
1
Terminal Finish
Matte Tin (Sn)
Turn On Delay Time
19 ns
Turn-Off Delay Time
28 ns
Rise Time
84ns

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