Supply original STB150NF55T4, Transistors - FETs, MOSFETs - Single, by STMicroelectronics

Supply original STB150NF55T4, Transistors - FETs, MOSFETs - Single, by STMicroelectronics | TrustCompo Electronic

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Part Number
STB150NF55T4
Internal code
TCE000012852
Package
-
Serise
STripFET™ II
key Attributes
-
Description
MOSFET N-CH 55V 120A D2PAK
Min Quantity
1
Manufacturer
STMicroelectronics
Category
Discrete Semiconductor Products
Sub Categroy
Transistors - FETs, MOSFETs - Single
Datasheet
-

Availability

In Stock402,575
Avaliable54,351

Price Range

QualityUnit Price
1
10
30
100
500
1,000

Due to different local policies, please contact us for the latest quotation.

Certified Quality Assurance
Responsive 24/7 Support
Free Shipping & Sample Provision
30-Day Return Policy

We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.

Product Attribute

Part Status
Active
Radiation Hardening
NO
Number of Terminations
2
REACH Status
REACH Unaffected
ECCN
EAR99
Height
6.35mm
Length
6.35mm
Width
6.35mm
Lead Free
Lead Free
Resistance
6mOhm
Mount
Surface Mount
Mounting Type
Surface Mount
Pin Count
3
Number of Pins
3
Factory Lead Time
12 Weeks
Reflow Temperature-Max (s)
30
Packaging
Tape & Reel (TR)
Termination
SMD/SMT
Terminal Form
GULL WING
Gate to Source Voltage (Vgs)
20V
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Element Configuration
Single
Peak Reflow Temperature (Cel)
245
Threshold Voltage
4V
Drive Voltage (Max Rds On,Min Rds On)
10V
Fall Time (Typ)
80 ns
Manufacturer
STMicroelectronics
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Nominal Vgs
4 V
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(th) (Max) @ Id
4V @ 250μA
Weight
4.535924g
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain to Source Breakdown Voltage
55V
Voltage - Rated DC
55V
Continuous Drain Current (ID)
60A
Series
STripFET™ II
Current - Continuous Drain (Id) @ 25°C
120A Tc
Current Rating
120A
Pulsed Drain Current-Max (IDM)
480A
Power Dissipation
300W
Power Dissipation-Max
300W Tc
Manufacturer's Part No.
STB150NF55T4
Rds On (Max) @ Id, Vgs
6m Ω @ 60A, 10V
Input Capacitance (Ciss) (Max) @ Vds
4400pF @ 25V
Base Part Number
STB150N
Avalanche Energy Rating (Eas)
850 mJ
Gate Charge (Qg) (Max) @ Vgs
190nC @ 10V

Export Classifications & Environmental

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095

Product Parameter

Number of Elements
1
Rise Time
180ns
Terminal Finish
Matte Tin (Sn) - annealed
Turn-Off Delay Time
140 ns
Turn On Delay Time
35 ns
Dual Supply Voltage
55V

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