Supply original BAV99-7-F, Diodes - Rectifiers - Arrays, by Diodes Incorporated
Pictures are for reference only. Please contact us for the latest pictures.
Availability
Price Range
| Quality | Unit Price |
|---|---|
| 1 | |
| 10 | |
| 30 | |
| 100 | |
| 500 | |
| 1,000 |
Due to different local policies, please contact us for the latest quotation.
We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.
Overview
The part number BAV99-7-F is a dual series switching diode manufactured by Diodes Incorporated. Here are the key features and specifications of the BAV99-7-F diode:
Key Features:
- Type: Dual series switching diode (common cathode)
- Reverse Voltage (VR): 70V
- Forward Continuous Current (IF): 200mA per diode (400mA total for both diodes)
- Forward Surge Current (IFSM): 600mA (per diode, non-repetitive)
- Junction Capacitance (Cj): 4pF (typical)
- Package: SOT-23 (3 leads)
Applications:
- General purpose switching applications
- High-speed switching
- Signal demodulation
- Logic gates
- Voltage clamping
Product Attribute
Product Parameter
Export Classifications & Environmental
Articles
This guide provides a direct comparison of HBM generations (up to HBM3e), analyzes the market landscape dominated by SK Hynix, Samsung, and Micron, and offers a crucial procurement checklist. It concludes with a practical case study, advising on capacity and bandwidth requirements (e.g., for a 175B parameter LLM), ensuring businesses can make informed decisions for their high-performance AI systems.
The Nexperia geopolitical crisis, involving legal takeover and counter-sanctions, poses the most severe recent risk to the global semiconductor supply chain, demanding immediate analysis of supply bottlenecks and price impacts for all component buyers.
With its unique properties of radiation hardening, unlimited read/write endurance, and low power consumption, MRAM is becoming the preferred choice for next-generation aerospace memory. This article will provide an in-depth analysis of MRAM's key advantages and applications in the aerospace field.
Comprehensive overview of MR25H40CDF SPI MRAM: specs, applications, case studies, and our real-stock advantages.
