Supply original CSD18540Q5BT, Transistors - FETs, MOSFETs - Single, by texas

Supply original CSD18540Q5BT, Transistors - FETs, MOSFETs - Single, by texas | TrustCompo Electronic

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Part Number
CSD18540Q5BT
Internal code
TCE000012789
Package
-
Serise
NexFET™
key Attributes
-
Description
MOSFET N-CH 60V 100A 8VSON
Min Quantity
1
Manufacturer
texas
Category
Discrete Semiconductor Products
Sub Categroy
Transistors - FETs, MOSFETs - Single
Datasheet
-

Availability

In Stock409,028
Avaliable524,669

Price Range

QualityUnit Price
1
10
30
100
500
1,000

Due to different local policies, please contact us for the latest quotation.

Certified Quality Assurance
Responsive 24/7 Support
Free Shipping & Sample Provision
30-Day Return Policy

We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.

Product Attribute

Part Status
Active
Contact Plating
Gold
Pbfree Code
Yes
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Contains Lead
Mount
Surface Mount
Mounting Type
Surface Mount
Lifecycle Status
ACTIVE (Last Updated: 5 days ago)
Length
5mm
Factory Lead Time
6 Weeks
Packaging
Tape & Reel (TR)
Number of Terminations
5
Number of Pins
8
Width
6mm
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Reflow Temperature-Max (s)
NOT SPECIFIED
Manufacturer
Texas
Gate to Source Voltage (Vgs)
20V
Element Configuration
Single
Height
1.05mm
Terminal Form
NO LEAD
Fall Time (Typ)
3 ns
Thickness
950μm
Threshold Voltage
1.9V
Weight
24.012046mg
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
Max Junction Temperature (Tj)
175°C
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
DS Breakdown Voltage-Min
60V
Additional Feature
AVALANCHE RATED
Power Dissipation
3.8W
Pulsed Drain Current-Max (IDM)
400A
Vgs(th) (Max) @ Id
2.3V @ 250μA
Manufacturer's Part No.
CSD18540Q5BT
Drain-source On Resistance-Max
0.0033Ohm
Power Dissipation-Max
3.1W Ta 195W Tc
Series
NexFET™
Rds On (Max) @ Id, Vgs
2.2m Ω @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C
100A Ta
Avalanche Energy Rating (Eas)
320 mJ
Base Part Number
CSD18540
Input Capacitance (Ciss) (Max) @ Vds
4230pF @ 30V
Package / Case
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs
53nC @ 10V
Continuous Drain Current (ID)
29A

Export Classifications & Environmental

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095

Product Parameter

Number of Channels
1
Number of Elements
1
Terminal Finish
Matte Tin (Sn)
Turn-Off Delay Time
20 ns
Turn On Delay Time
6 ns
Rise Time
9ns
Drain to Source Voltage (Vdss)
60V

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