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Request evaluation samplesSupply original IRLR3410TRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies
IRLR3410TRPBF is a Transistors - FETs, MOSFETs - Single model from Infineon Technologies, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. MOSFET N-CH 100V 17A DPAK. TrustCompo combines the available model, brand, hierarchy, and specification details around IRLR3410TRPBF so buyers can move faster from review to quotation.
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Datasheet
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Key specifications
Series
HEXFET®
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Category
Transistors - FETs, MOSFETs - SingleDescription
MOSFET N-CH 100V 17A DPAK
key Attributes
-
Datasheet
View IRLR3410TRPBF DatasheetTechnical document
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Globally recognized certifications
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ISO 9001
Quality management processes for more consistent sourcing and handling.
AS9120B
Aerospace-focused distribution controls for traceability and reliability.
ISO 14001
Environmental management discipline across warehouse and operating workflows.
ESD Control
Electrostatic handling standards to help protect sensitive components.
Ordering workflow
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Product overview
Overview
The part number IRLR3410TRPBF corresponds to a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. MOSFETs are semiconductor devices commonly used for switching and amplifying electronic signals in various applications.
Key Features:
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MOSFET Type: The IRLR3410TRPBF is a N-channel MOSFET, where "N-channel" refers to the type of semiconductor material used in the device's channel region.
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Enhancement Mode: This MOSFET operates in enhancement mode, meaning it requires a positive voltage applied to the gate terminal to turn the transistor on. In contrast, depletion mode MOSFETs are normally on and require a negative voltage to turn off.
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Low On-Resistance (RDS(on)): The MOSFET typically has a low on-resistance when turned on, which helps to minimize power dissipation and improve efficiency in switching applications.
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High Current Handling Capability: The IRLR3410TRPBF is designed to handle relatively high currents, making it suitable for applications requiring power switching or amplification.
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Low Gate Threshold Voltage (VGS(th)): The gate threshold voltage specifies the minimum voltage required to turn the MOSFET on. A low gate threshold voltage ensures compatibility with low-voltage control signals.
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Fast Switching Speed: The MOSFET exhibits fast switching characteristics, allowing for rapid turn-on and turn-off transitions, which is essential for high-frequency switching applications.
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Compact and Surface-Mount Package: The "TRPBF" suffix in the part number indicates that the MOSFET is provided in a surface-mount D2PAK (TO-263) package, which is compact and suitable for automated assembly processes.
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RoHS Compliance: The MOSFET complies with the Restriction of Hazardous Substances (RoHS) directive, which restricts the use of certain hazardous materials in electronic products.
Applications:
- Power Management: Used in various power management circuits such as voltage regulators, DC-DC converters, and motor control circuits.
- Switching Power Supplies: Employed in switching power supplies to control the flow of power between input and output stages efficiently.
- Motor Drive: Integrated into motor drive circuits for controlling the speed and direction of motors in applications such as robotics, industrial automation, and automotive systems.
- LED Lighting: Utilized in LED driver circuits for controlling the brightness of LEDs in lighting applications such as automotive lighting, street lighting, and indoor lighting.
- Battery Protection: Found in battery protection circuits for electronic devices to prevent overcurrent and overvoltage conditions.
- Audio Amplification: Used in audio amplifier circuits to switch audio signals and control speaker outputs.
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Popular Specs Surfaced First
Export Classifications & Environmental
JESD-609 Code
e3
Export Classifications & Environmental
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Export Classifications & Environmental
ECCN Code
EAR99
Export Classifications & Environmental
RoHS Status
ROHS3 Compliant
Export Classifications & Environmental
REACH SVHC
No SVHC
Export Classifications & Environmental
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
Contact Plating
Tin
Part Status
Active
Radiation Hardening
NO
Number Of Terminations
2
REACH Status
REACH Unaffected
ECCN
EAR99
Mount
Surface Mount
Mounting Type
Surface Mount
Number Of Pins
3
Factory Lead Time
12 Weeks
Published
2003
Reflow Temperature-Max (S)
30
Packaging
Tape & Reel (TR)
Voltage - Rated DC
100V
Drain To Source Breakdown Voltage
100V
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Width
6.22mm
Height
2.52mm
Length
6.7056mm
Threshold Voltage
2V
Element Configuration
Single
Lead Free
Contains Lead, Lead Free
Gate To Source Voltage (Vgs)
16V
Continuous Drain Current (ID)
17A
Current Rating
17A
Recovery Time
210 ns
Fall Time (Typ)
26 ns
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Max Junction Temperature (Tj)
175°C
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
JEDEC-95 Code
TO-252AA
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs (Max)
±16V
Current - Continuous Drain (Id) @ 25°C
17A Tc
Drive Voltage (Max Rds On,Min Rds On)
4V 10V
Nominal Vgs
2 V
Vgs(Th) (Max) @ Id
2V @ 250μA
Pulsed Drain Current-Max (IDM)
60A
Manufacturer'S Part No.
IRLR3410TRPBF
Rds On (Max) @ Id, Vgs
105m Ω @ 10A, 10V
Power Dissipation
79W
Gate Charge (Qg) (Max) @ Vgs
34nC @ 5V
Additional Feature
AVALANCHE RATED, ULTRA LOW RESISTANCE
Input Capacitance (Ciss) (Max) @ Vds
800pF @ 25V
Resistance
105mOhm
Power Dissipation-Max
79W Tc
Number Of Channels
1
Number Of Elements
1
Dual Supply Voltage
100V
Turn-Off Delay Time
30 ns
Rise Time
53ns
Turn On Delay Time
7.2 ns
Common questions
Product FAQ
Quick answers for buyers reviewing IRLR3410TRPBF, stock, documentation, and sourcing steps.
What is IRLR3410TRPBF?
IRLR3410TRPBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for IRLR3410TRPBF?
IRLR3410TRPBF is listed with package reference -. The current product description is MOSFET N-CH 100V 17A DPAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is IRLR3410TRPBF available in stock?
This page currently shows 187935 units in stock and 73514 units available for IRLR3410TRPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for IRLR3410TRPBF?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for IRLR3410TRPBF by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for IRLR3410TRPBF?
Yes. This page links to the datasheet for IRLR3410TRPBF by Infineon Technologies, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify IRLR3410TRPBF before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for IRLR3410TRPBF before approving the order.
Transistors - FETs, MOSFETs - Single
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