Supply original IRLR2905TRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

Supply original IRLR2905TRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo Electronic

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Part Number
IRLR2905TRPBF
Internal code
TCE000012714
Package
-
Serise
HEXFET®
key Attributes
-
Description
MOSFET N-CH 55V 42A DPAK
Min Quantity
1
Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products
Sub Categroy
Transistors - FETs, MOSFETs - Single
Datasheet
-

Availability

In Stock192,030
Avaliable195,523

Price Range

QualityUnit Price
1
10
30
100
500
1,000

Due to different local policies, please contact us for the latest quotation.

Certified Quality Assurance
Responsive 24/7 Support
Free Shipping & Sample Provision
30-Day Return Policy

We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.

Product Attribute

Contact Plating
Tin
Part Status
Active
Radiation Hardening
NO
Number of Terminations
2
ECCN
EAR99
Mounting Type
Surface Mount
Mount
Surface Mount
Number of Pins
3
Factory Lead Time
12 Weeks
Reflow Temperature-Max (s)
30
Packaging
Tape & Reel (TR)
Published
2000
Termination
SMD/SMT
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Width
6.22mm
Height
2.52mm
Length
6.7056mm
Threshold Voltage
2V
Element Configuration
Single
Recovery Time
120 ns
Lead Free
Contains Lead, Lead Free
Gate to Source Voltage (Vgs)
16V
Drain Current-Max (Abs) (ID)
20A
Fall Time (Typ)
15 ns
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Max Junction Temperature (Tj)
175°C
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
JEDEC-95 Code
TO-252AA
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs (Max)
±16V
Drive Voltage (Max Rds On,Min Rds On)
4V 10V
Drain to Source Breakdown Voltage
55V
Voltage - Rated DC
55V
Power Dissipation-Max
110W Tc
Nominal Vgs
2 V
Additional Feature
AVALANCHE RATED
Vgs(th) (Max) @ Id
2V @ 250μA
Current - Continuous Drain (Id) @ 25°C
42A Tc
Continuous Drain Current (ID)
42A
Power Dissipation
69W
Current Rating
41A
Rds On (Max) @ Id, Vgs
27m Ω @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds
1700pF @ 25V
Manufacturer's Part No.
IRLR2905TRPBF
Resistance
27mOhm
Gate Charge (Qg) (Max) @ Vgs
48nC @ 5V

Export Classifications & Environmental

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
RoHS Status
RoHS non-compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095

Product Parameter

Number of Elements
1
Number of Channels
1
Turn On Delay Time
11 ns
Turn-Off Delay Time
26 ns
Dual Supply Voltage
55V
Rise Time
84ns

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