Supply original IRLR120NTRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

Supply original IRLR120NTRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo Electronic

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Part Number
IRLR120NTRPBF
Internal code
TCE000012713
Package
-
Serise
HEXFET®
key Attributes
-
Description
MOSFET N-CH 100V 10A DPAK
Min Quantity
1
Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products
Sub Categroy
Transistors - FETs, MOSFETs - Single
Datasheet
-

Availability

In Stock602,856
Avaliable985,752

Price Range

QualityUnit Price
1
10
30
100
500
1,000

Due to different local policies, please contact us for the latest quotation.

Certified Quality Assurance
Responsive 24/7 Support
Free Shipping & Sample Provision
30-Day Return Policy

We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.

Product Attribute

Contact Plating
Tin
Part Status
Active
Radiation Hardening
NO
Number of Terminations
2
ECCN
EAR99
Lead Free
Lead Free
Mount
Surface Mount
Mounting Type
Surface Mount
Number of Pins
3
Factory Lead Time
12 Weeks
Published
2004
Reflow Temperature-Max (s)
30
Packaging
Tape & Reel (TR)
Voltage - Rated DC
100V
Drain to Source Breakdown Voltage
100V
Termination
SMD/SMT
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Width
6.22mm
Height
2.52mm
Length
6.7056mm
Continuous Drain Current (ID)
10A
Threshold Voltage
2V
Element Configuration
Single
Gate to Source Voltage (Vgs)
16V
Recovery Time
160 ns
Fall Time (Typ)
22 ns
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Max Junction Temperature (Tj)
175°C
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
JEDEC-95 Code
TO-252AA
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Current Rating
11A
Vgs (Max)
±16V
Drive Voltage (Max Rds On,Min Rds On)
4V 10V
Nominal Vgs
2 V
Additional Feature
AVALANCHE RATED
Vgs(th) (Max) @ Id
2V @ 250μA
Avalanche Energy Rating (Eas)
85 mJ
Power Dissipation-Max
48W Tc
Power Dissipation
48W
Manufacturer's Part No.
IRLR120NTRPBF
Current - Continuous Drain (Id) @ 25°C
10A Tc
Gate Charge (Qg) (Max) @ Vgs
20nC @ 5V
Resistance
185mOhm
Rds On (Max) @ Id, Vgs
185m Ω @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds
440pF @ 25V

Export Classifications & Environmental

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
RoHS Status
RoHS non-compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095

Product Parameter

Number of Channels
1
Number of Elements
1
Dual Supply Voltage
100V
Rise Time
35ns
Turn On Delay Time
4 ns
Turn-Off Delay Time
23 ns

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