Supply original IRL2203NSTRLPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

Supply original IRL2203NSTRLPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo Electronic

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Part Number
IRL2203NSTRLPBF
Internal code
TCE000012712
Package
-
Serise
HEXFET®
key Attributes
-
Description
MOSFET N-CH 30V 116A D2PAK
Min Quantity
1
Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products
Sub Categroy
Transistors - FETs, MOSFETs - Single
Datasheet
-

Availability

In Stock318,799
Avaliable939,253

Price Range

QualityUnit Price
1
10
30
100
500
1,000

Due to different local policies, please contact us for the latest quotation.

Certified Quality Assurance
Responsive 24/7 Support
Free Shipping & Sample Provision
30-Day Return Policy

We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.

Product Parameter

Number of Elements
1
Dual Supply Voltage
30V
Turn On Delay Time
11 ns
Turn-Off Delay Time
23 ns
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Rise Time
160ns

Product Attribute

Radiation Hardening
NO
Number of Terminations
2
REACH Status
REACH Unaffected
ECCN
EAR99
Mounting Type
Surface Mount
Mount
Surface Mount
Number of Pins
3
Voltage - Rated DC
30V
Drain to Source Breakdown Voltage
30V
Factory Lead Time
12 Weeks
Reflow Temperature-Max (s)
30
Packaging
Tape & Reel (TR)
Height
4.572mm
Published
2010
Termination
SMD/SMT
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Width
9.65mm
Threshold Voltage
3V
Element Configuration
Single
Lead Free
Contains Lead, Lead Free
Gate to Source Voltage (Vgs)
16V
Part Status
Not For New Designs
Resistance
7mOhm
Length
10.668mm
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Vgs (Max)
±16V
Power Dissipation
170W
Drain Current-Max (Abs) (ID)
75A
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Nominal Vgs
3 V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3290pF @ 25V
Rds On (Max) @ Id, Vgs
7m Ω @ 60A, 10V
Current Rating
116A
Continuous Drain Current (ID)
116A
Recovery Time
84 ns
Manufacturer's Part No.
IRL2203NSTRLPBF
Avalanche Energy Rating (Eas)
290 mJ
Gate Charge (Qg) (Max) @ Vgs
60nC @ 4.5V
Fall Time (Typ)
66 ns
Power Dissipation-Max
3.8W Ta 180W Tc
Current - Continuous Drain (Id) @ 25°C
116A Tc
Pulsed Drain Current-Max (IDM)
400A

Export Classifications & Environmental

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095

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