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Supply original IRFR4105TRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

Supply original IRFR4105TRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo Electronic

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Part Number
IRFR4105TRPBF
Internal code
TCE000012710
Package
-
Serise
HEXFET®
key Attributes
-
Description
MOSFET N-CH 55V 27A DPAK
Min Quantity
1
Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products
Sub Categroy
Transistors - FETs, MOSFETs - Single
Datasheet
-

Availability

In Stock144,640
Avaliable282,226

Price Range

QualityUnit Price
1
10
30
100
500
1,000

Due to different local policies, please contact us for the latest quotation.

Certified Quality Assurance
Responsive 24/7 Support
Free Shipping & Sample Provision
30-Day Return Policy

We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.

Product Attribute

Part Status
Active
Radiation Hardening
NO
Number of Terminations
2
REACH Status
REACH Unaffected
ECCN
EAR99
Mounting Type
Surface Mount
Number of Pins
3
Mount
Surface Mount, Through Hole
Factory Lead Time
12 Weeks
Reflow Temperature-Max (s)
30
Published
2005
Packaging
Tape & Reel (TR)
Termination
SMD/SMT
Resistance
45mOhm
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Continuous Drain Current (ID)
27A
Length
6.7056mm
Gate to Source Voltage (Vgs)
20V
Element Configuration
Single
Threshold Voltage
4V
Lead Free
Contains Lead, Lead Free
Fall Time (Typ)
40 ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Drain Current-Max (Abs) (ID)
20A
Width
2.38mm
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Nominal Vgs
4 V
JEDEC-95 Code
TO-252AA
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(th) (Max) @ Id
4V @ 250μA
Voltage - Rated DC
55V
Drain to Source Breakdown Voltage
55V
Height
2.3876mm
Current Rating
25A
Power Dissipation
48W
Avalanche Energy Rating (Eas)
65 mJ
Additional Feature
AVALANCHE RATED, ULTRA-LOW RESISTANCE
Current - Continuous Drain (Id) @ 25°C
27A Tc
Input Capacitance (Ciss) (Max) @ Vds
700pF @ 25V
Rds On (Max) @ Id, Vgs
45m Ω @ 16A, 10V
Manufacturer's Part No.
IRFR4105TRPBF
Gate Charge (Qg) (Max) @ Vgs
34nC @ 10V
Power Dissipation-Max
68W Tc
Recovery Time
86 ns

Export Classifications & Environmental

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095

Product Parameter

Number of Elements
1
Turn On Delay Time
7 ns
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Dual Supply Voltage
55V
Rise Time
49ns
Turn-Off Delay Time
31 ns

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