Supply original MC33174DG, Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps, by ON Semiconductor
Pictures are for reference only. Please contact us for the latest pictures.
Availability
Price Range
| Quality | Unit Price |
|---|---|
| 1 | |
| 10 | |
| 30 | |
| 100 | |
| 500 | |
| 1,000 |
Due to different local policies, please contact us for the latest quotation.
We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.
Overview
These devices operate at 180 μA per amplifier and offer 1.8 MHz of gain bandwidth product and 2.1 V/μs slew rate without the use of JFET device technology. Although this series can be operated from split supplies, it is particularly suited for single supply operation, since the common mode input voltage includes ground potential (VEE).With a Darlington input stage, these devices exhibit high input resistance, low input offset voltage and high gain.
The all NPN output stage, characterized by no deadband crossover distortion and large output voltage swing, provides high capacitance drive capability, excellent phase and gain margins, low open loop high frequency output impedance and symmetrical source/sink AC frequency response.
The MC33171/72/74 are specified over the industrial/automotive temperature ranges.
The complete series of single, dual and quad operational amplifiers are available in plastic as well as the surface mount packages.
Features
• Low Supply Current: 180 μA (Per Amplifier)
• Wide Supply Operating Range: 3.0 V to 44 V or ±1.5 V to ±22 V
• Wide Input Common Mode Range, Including Ground (VEE)
• Wide Bandwidth: 1.8 MHz
• High Slew Rate: 2.1 V/μs
• Low Input Offset Voltage: 2.0 mV
• Large Output Voltage Swing: −14.2 V to +14.2 V (with ±15 V Supplies)
• Large Capacitance Drive Capability: 0 pF to 500 pF
• Low Total Harmonic Distortion: 0.03%
• Excellent Phase Margin: 60°
• Excellent Gain Margin: 15 dB
• Output Short Circuit Protection
• ESD Diodes Provide Input Protection for Dual and Quad
• Pb−Free Packages are Available
• NCV Prefix for Automotive and Other Applications Requiring Site and Control Changes
Product Attribute
Product Parameter
Export Classifications & Environmental
Articles
This guide provides a direct comparison of HBM generations (up to HBM3e), analyzes the market landscape dominated by SK Hynix, Samsung, and Micron, and offers a crucial procurement checklist. It concludes with a practical case study, advising on capacity and bandwidth requirements (e.g., for a 175B parameter LLM), ensuring businesses can make informed decisions for their high-performance AI systems.
The Nexperia geopolitical crisis, involving legal takeover and counter-sanctions, poses the most severe recent risk to the global semiconductor supply chain, demanding immediate analysis of supply bottlenecks and price impacts for all component buyers.
With its unique properties of radiation hardening, unlimited read/write endurance, and low power consumption, MRAM is becoming the preferred choice for next-generation aerospace memory. This article will provide an in-depth analysis of MRAM's key advantages and applications in the aerospace field.
Comprehensive overview of MR25H40CDF SPI MRAM: specs, applications, case studies, and our real-stock advantages.
