Supply original BAT54HT1G, Diodes - Rectifiers - Single, by ON Semiconductor
Pictures are for reference only. Please contact us for the latest pictures.
Availability
Price Range
Quality | Unit Price |
---|---|
1 | |
10 | |
30 | |
100 | |
500 | |
1,000 |
Due to different local policies, please contact us for the latest quotation.
We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.
Overview
The BAT54HT1G is a Schottky barrier diode manufactured by ON Semiconductor, designed for various applications requiring low forward voltage drop and fast switching speeds. Here’s a detailed description of its key features and specifications:
General Description:
The BAT54HT1G is a small-signal Schottky diode that is particularly well-suited for use in high-speed switching applications, such as in RF and microwave circuits, as well as in power management systems. Its low forward voltage drop makes it ideal for applications where efficiency is critical.
Package:
The BAT54HT1G is typically available in a SOT-23 package, which is a compact, surface-mount package that allows for easy integration into printed circuit boards (PCBs). The SOT-23 package has three terminals, making it suitable for various configurations in electronic circuits.
Electrical Characteristics:
- Forward Voltage Drop (Vf): The BAT54HT1G features a low forward voltage drop, typically around 0.3V at a forward current of 1mA. This characteristic helps minimize power loss during operation.
- Reverse Voltage (Vr): The diode has a maximum reverse voltage rating of 30V, making it suitable for applications that require blocking high reverse voltages.
- Forward Current (If): The maximum forward current rating is typically around 200mA, allowing it to handle moderate current levels in various applications.
- Reverse Leakage Current (Ir): The reverse leakage current is low, typically in the microamp range, which is beneficial for battery-powered devices and low-power applications.
Performance:
The BAT54HT1G exhibits fast switching speeds, making it ideal for high-frequency applications. Its low capacitance also contributes to its performance in RF applications, where signal integrity is crucial.
Applications:
- RF and Microwave Circuits: Used in signal detection and mixing applications due to its fast response time.
- Power Management: Suitable for use in power supply circuits, where efficiency and low voltage drop are essential.
- Rectification: Can be used in low-voltage rectification applications, such as in power adapters and chargers.
- Clamping and Protection: Effective in clamping applications to protect sensitive components from voltage spikes.
Conclusion:
The BAT54HT1G from ON Semiconductor is a versatile Schottky diode that combines low forward voltage drop, fast switching capabilities, and compact packaging, making it an excellent choice for a wide range of electronic applications. Its reliability and efficiency make it a popular choice among engineers and designers in the electronics industry.
Product Parameter
Product Attribute
Export Classifications & Environmental
Articles
With its unique properties of radiation hardening, unlimited read/write endurance, and low power consumption, MRAM is becoming the preferred choice for next-generation aerospace memory. This article will provide an in-depth analysis of MRAM's key advantages and applications in the aerospace field.
Comprehensive overview of MR25H40CDF SPI MRAM: specs, applications, case studies, and our real-stock advantages.
Key developments and expert insights in the global electronic components industry for the fourth week of June 2025.