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Supply original IRFR5410TRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

Supply original IRFR5410TRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo Electronic

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Part Number
IRFR5410TRPBF
Internal code
TCE000011829
Package
-
Serise
HEXFET®
key Attributes
-
Description
MOSFET P-CH 100V 13A DPAK
Min Quantity
1
Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products
Sub Categroy
Transistors - FETs, MOSFETs - Single
Datasheet
-

Availability

In Stock368,180
Avaliable642,899

Price Range

QualityUnit Price
1
10
30
100
500
1,000

Due to different local policies, please contact us for the latest quotation.

Certified Quality Assurance
Responsive 24/7 Support
Free Shipping & Sample Provision
30-Day Return Policy

We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.

Product Attribute

Contact Plating
Tin
Part Status
Active
Radiation Hardening
NO
Number of Terminations
2
REACH Status
REACH Unaffected
ECCN
EAR99
Mount
Surface Mount
Mounting Type
Surface Mount
Number of Pins
3
Factory Lead Time
12 Weeks
Published
1999
Reflow Temperature-Max (s)
30
Packaging
Tape & Reel (TR)
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Width
6.22mm
Height
2.52mm
Length
6.7056mm
Gate to Source Voltage (Vgs)
20V
Max Junction Temperature (Tj)
150°C
Element Configuration
Single
Lead Free
Contains Lead, Lead Free
Drive Voltage (Max Rds On,Min Rds On)
10V
Fall Time (Typ)
46 ns
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
JEDEC-95 Code
TO-252AA
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(th) (Max) @ Id
4V @ 250μA
Operating Temperature
-55°C~150°C TJ
FET Type
P-Channel
Subcategory
Other Transistors
Nominal Vgs
-4 V
Current - Continuous Drain (Id) @ 25°C
13A Tc
Threshold Voltage
-4V
Continuous Drain Current (ID)
-13A
Current Rating
-13A
Recovery Time
190 ns
Drain to Source Breakdown Voltage
-100V
Voltage - Rated DC
-100V
Power Dissipation-Max
66W Tc
Rds On (Max) @ Id, Vgs
205m Ω @ 7.8A, 10V
Additional Feature
HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
Pulsed Drain Current-Max (IDM)
52A
Input Capacitance (Ciss) (Max) @ Vds
760pF @ 25V
Manufacturer's Part No.
IRFR5410TRPBF
Power Dissipation
66W
Gate Charge (Qg) (Max) @ Vgs
58nC @ 10V
Resistance
205mOhm

Export Classifications & Environmental

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
RoHS Status
RoHS non-compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095

Product Parameter

Number of Elements
1
Number of Channels
1
Drain to Source Voltage (Vdss)
100V
Turn-Off Delay Time
45 ns
Rise Time
58ns
Turn On Delay Time
15 ns
Dual Supply Voltage
-100V

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