Supply original IRFR3710ZTRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

Supply original IRFR3710ZTRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo Electronic

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Part Number
IRFR3710ZTRPBF
Internal code
TCE000011828
Package
-
Serise
HEXFET®
key Attributes
-
Description
MOSFET N-CH 100V 42A DPAK
Min Quantity
1
Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products
Sub Categroy
Transistors - FETs, MOSFETs - Single
Datasheet
-

Availability

In Stock698,946
Avaliable897,676

Price Range

QualityUnit Price
1
10
30
100
500
1,000

Due to different local policies, please contact us for the latest quotation.

Certified Quality Assurance
Responsive 24/7 Support
Free Shipping & Sample Provision
30-Day Return Policy

We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.

Product Attribute

Contact Plating
Tin
Part Status
Active
Radiation Hardening
NO
Number of Terminations
2
REACH Status
REACH Unaffected
ECCN
EAR99
Mounting Type
Surface Mount
Mount
Surface Mount
Number of Pins
3
Factory Lead Time
12 Weeks
Published
2004
Reflow Temperature-Max (s)
30
Packaging
Tape & Reel (TR)
Voltage - Rated DC
100V
Drain to Source Breakdown Voltage
100V
Termination
SMD/SMT
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Width
6.22mm
Height
2.52mm
Gate to Source Voltage (Vgs)
20V
Element Configuration
Single
Threshold Voltage
4V
Lead Free
Contains Lead, Lead Free
Drive Voltage (Max Rds On,Min Rds On)
10V
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Max Junction Temperature (Tj)
175°C
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
JEDEC-95 Code
TO-252AA
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(th) (Max) @ Id
4V @ 250μA
Fall Time (Typ)
42 ns
Recovery Time
53 ns
Nominal Vgs
2 V
Resistance
18MOhm
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Current - Continuous Drain (Id) @ 25°C
42A Tc
Current Rating
42A
Continuous Drain Current (ID)
42A
Power Dissipation
140W
Gate Charge (Qg) (Max) @ Vgs
100nC @ 10V
Length
6.1976mm
Manufacturer's Part No.
IRFR3710ZTRPBF
Rds On (Max) @ Id, Vgs
18m Ω @ 33A, 10V
Pulsed Drain Current-Max (IDM)
220A
Power Dissipation-Max
140W Tc
Input Capacitance (Ciss) (Max) @ Vds
2930pF @ 25V

Export Classifications & Environmental

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095

Product Parameter

Number of Elements
1
Number of Channels
1
Dual Supply Voltage
100V
Turn On Delay Time
14 ns
Turn-Off Delay Time
53 ns
Rise Time
43ns

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