Supply original IRF5210PBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

Supply original IRF5210PBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo Electronic

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Part Number
IRF5210PBF
Internal code
TCE000011825
Package
TO-
Serise
HEXFET®
key Attributes
-
Description
MOSFET P-CH 100V 40A TO-220AB
Min Quantity
1
Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products
Sub Categroy
Transistors - FETs, MOSFETs - Single
Datasheet
-

Availability

In Stock83,540
Avaliable75,921

Price Range

QualityUnit Price
1
10
30
100
500
1,000

Due to different local policies, please contact us for the latest quotation.

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We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.

Overview

The Infineon Technologies IRF5210PBF is a 100V, 24A, 500W N-channel MOSFET in a TO-220AB package. It is a highly efficient and reliable MOSFET that is ideal for a wide variety of applications, including motor control, power supplies, and inverter circuits.

Key Features

  • Very low on-resistance (Rds(on)) of 60mΩ max.
  • Fast switching speed
  • High breakdown voltage (Vds) of 100V
  • High current capability (Id) of 24A
  • High power dissipation (Pd) of 200W

Benefits

  • Improved efficiency and reduced power consumption
  • Reduced switching losses
  • Increased reliability and ruggedness
  • Ability to handle high currents and voltages
  • Suitable for a wide range of applications

Applications

  • DC motor control
  • Switching power supplies
  • AC motor drives
  • Inverters
  • Battery chargers
  • Solar energy systems

Electrical Characteristics

  • Vds: 100V
  • Id: 24A
  • Rds(on) ≤ 60mΩ
  • Tj: -55°C to +175°C
  • Tstg: -55°C to +150°C
  • TL: 1.6mm (0.062 in.) from Case for 10s: 300°C
  • TSOLD: Plastic Body for 10s: 260°C
  • Md: Mounting Torque (TO-220): 1.13/10 Nm/lb.in.
  • FC: Mounting Force (PLUS247): 20..120 /4.5..27. N/lb.
  • Weight: TO-220: 10 g, PLUS247: 6 g

Package

  • TO-220AB

Product Parameter

Number of Elements
1
Number of Channels
1
Drain to Source Voltage (Vdss)
100V
Turn-Off Delay Time
79 ns
Turn On Delay Time
17 ns
Rise Time
86ns
Dual Supply Voltage
-100V

Product Attribute

Contact Plating
Tin
Part Status
Active
Radiation Hardening
NO
Mount
Through Hole
Mounting Type
Through Hole
Termination
Through Hole
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Pitch
2.54mm
Lead Free
Lead Free
Packaging
Tube
Number of Pins
3
Number of Terminations
3
Factory Lead Time
12 Weeks
Reflow Temperature-Max (s)
30
Published
1998
Height
19.8mm
Gate to Source Voltage (Vgs)
20V
Element Configuration
Single
Peak Reflow Temperature (Cel)
250
Resistance
60mOhm
Drive Voltage (Max Rds On,Min Rds On)
10V
Width
4.69mm
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Technology
MOSFET (Metal Oxide)
Max Junction Temperature (Tj)
175°C
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(th) (Max) @ Id
4V @ 250μA
FET Type
P-Channel
Subcategory
Other Transistors
Nominal Vgs
-4 V
Threshold Voltage
-4V
JEDEC-95 Code
TO-220AB
Power Dissipation
200W
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Power Dissipation-Max
200W Tc
Package / Case
TO-220-3
Gate Charge (Qg) (Max) @ Vgs
180nC @ 10V
Recovery Time
260 ns
Manufacturer's Part No.
IRF5210PBF
Continuous Drain Current (ID)
-40A
Current Rating
-40A
Voltage - Rated DC
-100V
Drain to Source Breakdown Voltage
-100V
Fall Time (Typ)
81 ns
Input Capacitance (Ciss) (Max) @ Vds
2700pF @ 25V
Rds On (Max) @ Id, Vgs
60m Ω @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C
40A Tc
Avalanche Energy Rating (Eas)
780 mJ
Length
10.5156mm

Export Classifications & Environmental

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095

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