Supply original IRF5305STRLPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

Supply original IRF5305STRLPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo Electronic

Pictures are for reference only. Please contact us for the latest pictures.

Part Number
IRF5305STRLPBF
Internal code
TCE000011646
Package
-
Serise
HEXFET®
key Attributes
-
Description
MOSFET P-CH 55V 31A D2PAK
Min Quantity
1
Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products
Sub Categroy
Transistors - FETs, MOSFETs - Single
Datasheet
-

Availability

In Stock990,445
Avaliable707,067

Price Range

QualityUnit Price
1
10
30
100
500
1,000

Due to different local policies, please contact us for the latest quotation.

Certified Quality Assurance
Responsive 24/7 Support
Free Shipping & Sample Provision
30-Day Return Policy

We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.

Product Attribute

Contact Plating
Tin
Part Status
Active
Radiation Hardening
NO
Number of Terminations
2
REACH Status
REACH Unaffected
ECCN
EAR99
Mounting Type
Surface Mount
Mount
Surface Mount
Number of Pins
3
Factory Lead Time
12 Weeks
Reflow Temperature-Max (s)
30
Published
2005
Packaging
Tape & Reel (TR)
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Width
9.65mm
Gate to Source Voltage (Vgs)
20V
Element Configuration
Single
Lead Free
Contains Lead, Lead Free
Resistance
60mOhm
Drive Voltage (Max Rds On,Min Rds On)
10V
Recovery Time
110 ns
Length
10.668mm
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Technology
MOSFET (Metal Oxide)
Max Junction Temperature (Tj)
175°C
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(th) (Max) @ Id
4V @ 250μA
FET Type
P-Channel
Subcategory
Other Transistors
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Nominal Vgs
-4 V
Threshold Voltage
-4V
Power Dissipation
110W
Height
5.084mm
JEDEC-95 Code
TO-252
Drain to Source Breakdown Voltage
-55V
Voltage - Rated DC
-55V
Input Capacitance (Ciss) (Max) @ Vds
1200pF @ 25V
Manufacturer's Part No.
IRF5305STRLPBF
Continuous Drain Current (ID)
-31A
Current Rating
-31A
Rds On (Max) @ Id, Vgs
60m Ω @ 16A, 10V
Power Dissipation-Max
3.8W Ta 110W Tc
Current - Continuous Drain (Id) @ 25°C
31A Tc
Gate Charge (Qg) (Max) @ Vgs
63nC @ 10V
Fall Time (Typ)
63 ns
Additional Feature
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas)
280 mJ

Export Classifications & Environmental

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095

Product Parameter

Number of Elements
1
Number of Channels
1
Turn-Off Delay Time
39 ns
Turn On Delay Time
14 ns
Drain to Source Voltage (Vdss)
55V
Dual Supply Voltage
-55V
Rise Time
66ns

Articles

With its unique properties of radiation hardening, unlimited read/write endurance, and low power consumption, MRAM is becoming the preferred choice for next-generation aerospace memory. This article will provide an in-depth analysis of MRAM's key advantages and applications in the aerospace field.

Comprehensive overview of MR25H40CDF SPI MRAM: specs, applications, case studies, and our real-stock advantages.

Key developments and expert insights in the global electronic components industry for the fourth week of June 2025.