Supply original IRF9540NSTRLPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

Supply original IRF9540NSTRLPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo Electronic

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Part Number
IRF9540NSTRLPBF
Internal code
TCE000009871
Package
-
Serise
HEXFET®
key Attributes
-
Description
MOSFET P-CH 100V 23A D2PAK
Min Quantity
1
Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products
Sub Categroy
Transistors - FETs, MOSFETs - Single
Datasheet
-

Availability

In Stock277,473
Avaliable672,405

Price Range

QualityUnit Price
1
10
30
100
500
1,000

Due to different local policies, please contact us for the latest quotation.

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30-Day Return Policy

We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.

Overview

Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.

Features

  • Advanced Process Technology
  • Ultra Low On-Resistance
  • 150°C Operating Temperature
  • Fast Switching
  • Repetitive Avalanche Allowed up to Tjmax
  • Some Parameters are Different from
  • IRF9540NS/L
  • P-Channel
  • Lead-Free

Product Attribute

Contact Plating
Tin
Part Status
Active
Radiation Hardening
NO
Number of Terminations
2
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Contains Lead
Mounting Type
Surface Mount
Mount
Surface Mount
Number of Pins
3
Factory Lead Time
12 Weeks
Published
2003
Reflow Temperature-Max (s)
30
Packaging
Tape & Reel (TR)
Voltage
100V
Termination
SMD/SMT
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Width
9.65mm
Gate to Source Voltage (Vgs)
20V
Max Junction Temperature (Tj)
150°C
Current
23A
Element Configuration
Single
Drive Voltage (Max Rds On,Min Rds On)
10V
Recovery Time
210 ns
Length
10.668mm
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(th) (Max) @ Id
4V @ 250μA
Operating Temperature
-55°C~150°C TJ
FET Type
P-Channel
Subcategory
Other Transistors
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Nominal Vgs
-4 V
Threshold Voltage
-4V
Height
5.084mm
Fall Time (Typ)
51 ns
Power Dissipation
3.8W
Voltage - Rated DC
-100V
Drain to Source Breakdown Voltage
-100V
Current - Continuous Drain (Id) @ 25°C
23A Tc
Continuous Drain Current (ID)
-23A
Current Rating
-23A
Rds On (Max) @ Id, Vgs
117m Ω @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs
110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1450pF @ 25V
Avalanche Energy Rating (Eas)
84 mJ
Resistance
117mOhm
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Power Dissipation-Max
3.1W Ta 110W Tc
Manufacturer's Part No.
IRF9540NSTRLPBF

Export Classifications & Environmental

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
RoHS Status
RoHS non-compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095

Product Parameter

Number of Elements
1
Number of Channels
1
Dual Supply Voltage
100V
Turn-Off Delay Time
40 ns
Turn On Delay Time
13 ns
Rise Time
67ns

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