Supply original IRF4905STRLPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

Supply original IRF4905STRLPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo Electronic

Pictures are for reference only. Please contact us for the latest pictures.

Part Number
IRF4905STRLPBF
Internal code
TCE000009870
Package
-
Serise
HEXFET®
key Attributes
-
Description
MOSFET P-CH 55V 42A D2PAK
Min Quantity
1
Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products
Sub Categroy
Transistors - FETs, MOSFETs - Single
Datasheet
-

Availability

In Stock544,021
Avaliable483,058

Price Range

QualityUnit Price
1
10
30
100
500
1,000

Due to different local policies, please contact us for the latest quotation.

Certified Quality Assurance
Responsive 24/7 Support
Free Shipping & Sample Provision
30-Day Return Policy

We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.

Product Attribute

Contact Plating
Tin
Part Status
Active
Radiation Hardening
NO
Number of Terminations
2
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Contains Lead
Mount
Surface Mount
Mounting Type
Surface Mount
Number of Pins
3
Factory Lead Time
12 Weeks
Resistance
20mOhm
Published
1997
Reflow Temperature-Max (s)
30
Packaging
Tape & Reel (TR)
Termination
SMD/SMT
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Threshold Voltage
-2V
Height
4.83mm
Gate to Source Voltage (Vgs)
20V
Max Junction Temperature (Tj)
150°C
Element Configuration
Single
Width
10.54mm
Length
10.54mm
Drive Voltage (Max Rds On,Min Rds On)
10V
Fall Time (Typ)
64 ns
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(th) (Max) @ Id
4V @ 250μA
Operating Temperature
-55°C~150°C TJ
FET Type
P-Channel
Subcategory
Other Transistors
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Nominal Vgs
-4 V
Manufacturer's Part No.
IRF4905STRLPBF
Power Dissipation
3.8W
Voltage - Rated DC
-55V
Drain to Source Breakdown Voltage
-55V
Input Capacitance (Ciss) (Max) @ Vds
3500pF @ 25V
Current Rating
-74A
Continuous Drain Current (ID)
-42A
Pulsed Drain Current-Max (IDM)
280A
Recovery Time
92 ns
Power Dissipation-Max
170W Tc
Additional Feature
HIGH RELIABILITY, AVALANCHE RATED
Current - Continuous Drain (Id) @ 25°C
42A Tc
Gate Charge (Qg) (Max) @ Vgs
180nC @ 10V
Manufacturer Package Identifier
D2Pak
Rds On (Max) @ Id, Vgs
20m Ω @ 42A, 10V

Export Classifications & Environmental

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095

Product Parameter

Number of Elements
1
Number of Channels
1
Turn On Delay Time
20 ns
Drain to Source Voltage (Vdss)
55V
Rise Time
99ns
Turn-Off Delay Time
51 ns
Dual Supply Voltage
-55V

Articles

With its unique properties of radiation hardening, unlimited read/write endurance, and low power consumption, MRAM is becoming the preferred choice for next-generation aerospace memory. This article will provide an in-depth analysis of MRAM's key advantages and applications in the aerospace field.

Comprehensive overview of MR25H40CDF SPI MRAM: specs, applications, case studies, and our real-stock advantages.

Key developments and expert insights in the global electronic components industry for the fourth week of June 2025.