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Request evaluation samplesSupply original IRF3205STRLPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies
IRF3205STRLPBF is a Transistors - FETs, MOSFETs - Single model from Infineon Technologies, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. MOSFET N-CH 55V 110A D2PAK. TrustCompo combines the available model, brand, hierarchy, and specification details around IRF3205STRLPBF so buyers can move faster from review to quotation.
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Datasheet
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Key specifications
Series
HEXFET®
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Category
Transistors - FETs, MOSFETs - SingleDescription
MOSFET N-CH 55V 110A D2PAK
key Attributes
-
Datasheet
View IRF3205STRLPBF DatasheetTechnical document
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ISO 9001
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Product overview
Overview
The IRF3205STRLPBF is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This device is designed for applications requiring efficient power management, such as in power supplies, motor drives, and other high-current switching applications.
Key Features:
- Type: N-channel MOSFET
- Voltage Rating: The IRF3205 has a maximum drain-source voltage (V_DS) of 55V, making it suitable for various applications that operate within this voltage range.
- Current Rating: It can handle a continuous drain current (I_D) of up to 110A at a temperature of 25°C, which allows it to manage high power loads effectively.
- R_DS(on): The on-resistance (R_DS(on)) is exceptionally low, typically around 8 mΩ at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power losses during operation, enhancing overall efficiency.
- Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is in the range of 2V to 4V, which allows for easy drive with standard logic levels.
- Package Type: The IRF3205 is available in a TO-220 package, which provides good thermal performance and is suitable for heat dissipation in high-power applications.
- Thermal Resistance: The thermal resistance from junction to case (RθJC) is low, allowing for effective heat management, which is critical in high-power applications.
- Fast Switching: The device is designed for fast switching speeds, making it ideal for applications that require rapid on/off control.
Applications:
- Power Supplies: Used in switch-mode power supplies (SMPS) for efficient voltage regulation.
- Motor Control: Suitable for driving DC motors and other inductive loads.
- DC-DC Converters: Commonly used in buck, boost, and other converter topologies.
- Battery Management Systems: Employed in systems that require efficient power distribution and management.
Electrical Characteristics:
- Maximum Gate-Source Voltage (V_GS): ±20V
- Maximum Pulsed Drain Current (I_D,pulse): Up to 160A, allowing for brief high-current applications.
- Body Diode Characteristics: The IRF3205 features an intrinsic body diode, which provides a path for current when the MOSFET is off, useful in applications like synchronous rectification.
Reliability and Compliance:
The IRF3205STRLPBF is designed to meet stringent reliability standards and is compliant with RoHS (Restriction of Hazardous Substances) regulations, making it an environmentally friendly choice for modern electronic designs.
Conclusion:
The IRF3205STRLPBF from Infineon Technologies is a robust and efficient N-channel MOSFET that excels in high-current and high-voltage applications. Its low on-resistance, high current handling capability, and fast switching characteristics make it a preferred choice for engineers looking to optimize power management in their designs.
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Popular Specs Surfaced First
Product Parameter
Number Of Channels
1
Product Parameter
Number Of Elements
1
Product Parameter
Turn-Off Delay Time
50 ns
Product Parameter
Turn On Delay Time
14 ns
Product Parameter
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Product Parameter
Dual Supply Voltage
55V
Number Of Channels
1
Number Of Elements
1
Turn-Off Delay Time
50 ns
Turn On Delay Time
14 ns
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Dual Supply Voltage
55V
Rise Time
101ns
Part Status
Active
Radiation Hardening
NO
Number Of Terminations
2
REACH Status
REACH Unaffected
ECCN
EAR99
Mount
Surface Mount
Mounting Type
Surface Mount
Number Of Pins
3
Factory Lead Time
12 Weeks
Published
2001
Reflow Temperature-Max (S)
30
Packaging
Tape & Reel (TR)
Termination
SMD/SMT
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Gate To Source Voltage (Vgs)
20V
Element Configuration
Single
Threshold Voltage
4V
Width
10.54mm
Lead Free
Contains Lead, Lead Free
Fall Time (Typ)
65 ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Length
10.668mm
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Max Junction Temperature (Tj)
175°C
Nominal Vgs
4 V
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
4V @ 250μA
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain To Source Breakdown Voltage
55V
Voltage - Rated DC
55V
Power Dissipation
200W
Avalanche Energy Rating (Eas)
264 mJ
Gate Charge (Qg) (Max) @ Vgs
146nC @ 10V
Recovery Time
104 ns
Rds On (Max) @ Id, Vgs
8m Ω @ 62A, 10V
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Drain Current-Max (Abs) (ID)
75A
Input Capacitance (Ciss) (Max) @ Vds
3247pF @ 25V
Continuous Drain Current (ID)
110A
Current Rating
110A
Current - Continuous Drain (Id) @ 25°C
110A Tc
Resistance
8MOhm
Height
5.084mm
Power Dissipation-Max
200W Tc
JEDEC-95 Code
TO-252
Manufacturer'S Part No.
IRF3205STRLPBF
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
Common questions
Product FAQ
Quick answers for buyers reviewing IRF3205STRLPBF, stock, documentation, and sourcing steps.
What is IRF3205STRLPBF?
IRF3205STRLPBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for IRF3205STRLPBF?
IRF3205STRLPBF is listed with package reference -. The current product description is MOSFET N-CH 55V 110A D2PAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is IRF3205STRLPBF available in stock?
This page currently shows 37274 units in stock and 23413 units available for IRF3205STRLPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for IRF3205STRLPBF?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for IRF3205STRLPBF by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for IRF3205STRLPBF?
Yes. This page links to the datasheet for IRF3205STRLPBF by Infineon Technologies, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify IRF3205STRLPBF before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for IRF3205STRLPBF before approving the order.
Transistors - FETs, MOSFETs - Single
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