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Supply original IRF3710ZPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

Supply original IRF3710ZPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo Electronic

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Part Number
IRF3710ZPBF
Internal code
TCE000009868
Package
TO-
Serise
HEXFET®
key Attributes
-
Description
MOSFET N-CH 100V 59A TO-220AB
Min Quantity
1
Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products
Sub Categroy
Transistors - FETs, MOSFETs - Single
Datasheet
-

Availability

In Stock672,048
Avaliable402,227

Price Range

QualityUnit Price
1
10
30
100
500
1,000

Due to different local policies, please contact us for the latest quotation.

Certified Quality Assurance
Responsive 24/7 Support
Free Shipping & Sample Provision
30-Day Return Policy

We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.

Product Attribute

Part Status
Active
Radiation Hardening
NO
Mounting Type
Through Hole
Mount
Through Hole
Termination
Through Hole
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Pitch
2.54mm
Lead Free
Lead Free
Packaging
Tube
Number of Terminations
3
Number of Pins
3
Factory Lead Time
12 Weeks
Published
2003
Reflow Temperature-Max (s)
30
Voltage - Rated DC
100V
Drain to Source Breakdown Voltage
100V
Height
19.8mm
Gate to Source Voltage (Vgs)
20V
Recovery Time
75 ns
Element Configuration
Single
Threshold Voltage
4V
Length
10.54mm
Peak Reflow Temperature (Cel)
250
Drive Voltage (Max Rds On,Min Rds On)
10V
Width
4.69mm
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Max Junction Temperature (Tj)
175°C
Nominal Vgs
4 V
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(th) (Max) @ Id
4V @ 250μA
Fall Time (Typ)
56 ns
Continuous Drain Current (ID)
59A
Current Rating
59A
Avalanche Energy Rating (Eas)
200 mJ
JEDEC-95 Code
TO-220AB
Gate Charge (Qg) (Max) @ Vgs
120nC @ 10V
Power Dissipation-Max
160W Tc
Rds On (Max) @ Id, Vgs
18m Ω @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C
59A Tc
Manufacturer's Part No.
IRF3710ZPBF
Resistance
18MOhm
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Input Capacitance (Ciss) (Max) @ Vds
2900pF @ 25V
Pulsed Drain Current-Max (IDM)
240A
Power Dissipation
160W
Package / Case
TO-220-3

Export Classifications & Environmental

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095

Product Parameter

Number of Channels
1
Number of Elements
1
Dual Supply Voltage
100V
Reverse Recovery Time
50 ns
Turn-Off Delay Time
41 ns
Turn On Delay Time
17 ns
Terminal Finish
MATTE TIN OVER NICKEL
Rise Time
77ns

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