Supply original IRLR024NTRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

Supply original IRLR024NTRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo Electronic

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Part Number
IRLR024NTRPBF
Internal code
TCE000009751
Package
-
Serise
HEXFET®
key Attributes
-
Description
MOSFET N-CH 55V 17A DPAK
Min Quantity
1
Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products
Sub Categroy
Transistors - FETs, MOSFETs - Single
Datasheet
-

Availability

In Stock375,821
Avaliable282,667

Price Range

QualityUnit Price
1
10
30
100
500
1,000

Due to different local policies, please contact us for the latest quotation.

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Overview

The IRLR024NTRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This component is designed for high-efficiency power management applications, making it suitable for a variety of uses in both consumer and industrial electronics.

Key Features:

  1. N-Channel Configuration: The IRLR024NTRPBF is an N-channel MOSFET, which means it uses electrons as the charge carriers. This configuration typically offers lower on-resistance and higher efficiency compared to P-channel MOSFETs.

  2. Voltage Rating: The device has a maximum drain-source voltage (V_DS) rating of 30V, making it suitable for low to medium voltage applications.

  3. Current Rating: It can handle a continuous drain current (I_D) of up to 60A, which allows it to manage significant power loads effectively.

  4. On-Resistance: The on-resistance (R_DS(on)) is typically around 0.025 ohms at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses and improved thermal performance during operation.

  5. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 1V to 2V, which allows for easy driving with standard logic levels.

  6. Package Type: The IRLR024NTRPBF is available in a TO-220 package, which provides good thermal performance and is easy to mount on a heatsink for enhanced heat dissipation.

  7. Fast Switching Speed: This MOSFET is designed for fast switching applications, making it ideal for use in power supplies, motor drivers, and other applications where rapid on/off switching is required.

  8. Thermal Characteristics: The device has a maximum junction temperature (T_J) of 175°C, allowing it to operate in demanding thermal environments.

  9. RoHS Compliance: The IRLR024NTRPBF is compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring that it is free from certain hazardous materials.

Applications:

  • Power Management: Used in DC-DC converters, power supplies, and battery management systems.
  • Motor Control: Suitable for driving motors in various applications, including robotics and industrial automation.
  • Switching Regulators: Ideal for use in synchronous rectification and other switching applications.
  • LED Drivers: Can be used in circuits designed to drive LED lighting systems efficiently.

Conclusion:

The IRLR024NTRPBF from Infineon Technologies is a versatile and efficient N-channel MOSFET that is well-suited for a wide range of applications requiring reliable power management and switching capabilities. Its combination of high current handling, low on-resistance, and fast switching speed makes it a popular choice among engineers and designers in the electronics industry.

Product Attribute

Contact Plating
Tin
Part Status
Active
Radiation Hardening
NO
Number of Terminations
2
REACH Status
REACH Unaffected
ECCN
EAR99
Mount
Surface Mount
Mounting Type
Surface Mount
Number of Pins
3
Factory Lead Time
12 Weeks
Published
2004
Reflow Temperature-Max (s)
30
Packaging
Tape & Reel (TR)
Termination
SMD/SMT
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Width
6.22mm
Height
2.52mm
Length
6.7056mm
Threshold Voltage
2V
Element Configuration
Single
Recovery Time
90 ns
Lead Free
Contains Lead, Lead Free
Gate to Source Voltage (Vgs)
16V
Current Rating
17A
Continuous Drain Current (ID)
17A
Resistance
80mOhm
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Max Junction Temperature (Tj)
175°C
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
JEDEC-95 Code
TO-252AA
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Additional Feature
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Vgs (Max)
±16V
Current - Continuous Drain (Id) @ 25°C
17A Tc
Fall Time (Typ)
29 ns
Input Capacitance (Ciss) (Max) @ Vds
480pF @ 25V
Pulsed Drain Current-Max (IDM)
72A
Avalanche Energy Rating (Eas)
68 mJ
Drive Voltage (Max Rds On,Min Rds On)
4V 10V
Voltage - Rated DC
55V
Drain to Source Breakdown Voltage
55V
Rds On (Max) @ Id, Vgs
65m Ω @ 10A, 10V
Nominal Vgs
2 V
Gate Charge (Qg) (Max) @ Vgs
15nC @ 5V
Power Dissipation
45W
Vgs(th) (Max) @ Id
2V @ 250μA
Power Dissipation-Max
45W Tc
Manufacturer's Part No.
IRLR024NTRPBF

Export Classifications & Environmental

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095

Product Parameter

Number of Elements
1
Number of Channels
1
Turn-Off Delay Time
20 ns
Turn On Delay Time
7.1 ns
Dual Supply Voltage
55V
Rise Time
74ns

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