Supply original MC7805ACD2TG, PMIC - Voltage Regulators - Linear, by ON Semiconductor
Pictures are for reference only. Please contact us for the latest pictures.
Availability
Price Range
Quality | Unit Price |
---|---|
1 | |
10 | |
30 | |
100 | |
500 | |
1,000 |
Due to different local policies, please contact us for the latest quotation.
We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.
Overview
The MC74VHCT139A is an advanced high speed CMOS 2−to−4 decoder/demultiplexer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL devices while maintaining CMOS low power dissipation.When the device is enabled (E = low), it can be used for gating or as a data input for demultiplexing operations. When the enable input is held high, all four outputs are fixed high, independent of other inputs.
The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output.
The device output is compatible with TTL−type input thresholds and the output has a full 5.0 V CMOS level output swing.
The input protection circuitry on this device allows overvoltage tolerance on the input, allowing the device to be used as a logic−level translator from 3.0 V CMOS logic to 5.0 V CMOS logic, or from 1.8 V CMOS logic to 3.0 V CMOS logic while operating at the high−voltage power supply
The MC74VHCT139A input structure provides protection when voltages up to 7.0 V are applied, regardless of the supply voltage. This allows the MC74VHCT139A to be used to interface 5.0 V circuits to 3.0 V circuits.
The output structures also provide protection when VCC = 0 V.
These input and output structures help prevent device destruction caused by supply voltage−input/output voltage mismatch, battery backup, hot insertion, etc.
Features
• High Speed: tPD = 5.0 ns (Typ) at VCC = 5.0 V
• Low Power Dissipation: ICC = 4 μΑ (Max) at TA = 25°C
• TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2.0 V
• Power Down Protection Provided on Inputs and Outputs
• Balanced Propagation Delays
• Designed for 2.0 V to 5.5 V Operating Range
• Low Noise: VOLP = 0.8 V (Max)
• Pin and Function Compatible with Other Standard Logic Families
• Latchup Performance Exceeds 300 mA
• ESD Performance: Human Body Model > 2000 V; Machine Model > 200 V
• Chip Complexity: 100 FETs or 25 Equivalent Gates
•
These Devices are Pb−Free and are RoHS Compliant
Product Attribute
Export Classifications & Environmental
Product Parameter
Articles
With its unique properties of radiation hardening, unlimited read/write endurance, and low power consumption, MRAM is becoming the preferred choice for next-generation aerospace memory. This article will provide an in-depth analysis of MRAM's key advantages and applications in the aerospace field.
Comprehensive overview of MR25H40CDF SPI MRAM: specs, applications, case studies, and our real-stock advantages.
Key developments and expert insights in the global electronic components industry for the fourth week of June 2025.