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Supply original BSP315PH6327XTSA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

Supply original BSP315PH6327XTSA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo Electronic

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Part Number
BSP315PH6327XTSA1
Internal code
TCE000009141
Package
SOT-223
Serise
SIPMOS®
key Attributes
-
Description
MOSFET P-CH 60V 1.17A SOT-223
Min Quantity
1
Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products
Sub Categroy
Transistors - FETs, MOSFETs - Single
Datasheet
-

Availability

In Stock878,222
Avaliable64,502

Price Range

QualityUnit Price
1
10
30
100
500
1,000

Due to different local policies, please contact us for the latest quotation.

Certified Quality Assurance
Responsive 24/7 Support
Free Shipping & Sample Provision
30-Day Return Policy

We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.

Product Parameter

Number of Channels
1
Number of Elements
1
Turn-Off Delay Time
32 ns
Turn On Delay Time
24 ns
Rise Time
9ns
Dual Supply Voltage
-60V
Max Dual Supply Voltage
-60V
Drain to Source Voltage (Vdss)
60V

Product Attribute

Contact Plating
Tin
Part Status
Active
Radiation Hardening
NO
Pbfree Code
Yes
REACH Status
REACH Unaffected
ECCN
EAR99
Number of Terminations
4
Number of Pins
4
Pin Count
4
Lead Free
Lead Free
Mount
Surface Mount
Mounting Type
Surface Mount
Published
1999
Reflow Temperature-Max (s)
40
Factory Lead Time
10 Weeks
Halogen Free
Halogen Free
Termination
SMD/SMT
Height
1.8mm
Packaging
Cut Tape (CT)
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Length
6.5mm
Width
6.7mm
Gate to Source Voltage (Vgs)
20V
Max Junction Temperature (Tj)
150°C
Element Configuration
Single
Drain-source On Resistance-Max
0.8Ohm
Package / Case
TO-261-4, TO-261AA
Fall Time (Typ)
19 ns
Recovery Time
46 ns
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
Power Dissipation
1.8W
Operating Temperature
-55°C~150°C TJ
Vgs(th) (Max) @ Id
2V @ 160μA
Drain to Source Breakdown Voltage
-60V
Manufacturer's Part No.
BSP315PH6327XTSA1
FET Type
P-Channel
Manufacturer Package Identifier
PG-SOT223-4
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Threshold Voltage
-1.5V
Additional Feature
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Gate Charge (Qg) (Max) @ Vgs
7.8nC @ 10V
Power Dissipation-Max
1.8W Ta
Current - Continuous Drain (Id) @ 25°C
1.17A Ta
Series
SIPMOS®
Rds On (Max) @ Id, Vgs
800m Ω @ 1.17A, 10V
Continuous Drain Current (ID)
1.17A
Nominal Vgs
-1.5 V
Input Capacitance (Ciss) (Max) @ Vds
160pF @ 25V
Subcategory
Other Transistors

Export Classifications & Environmental

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095

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