Supply original LM224DR, Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps, by texas
Pictures are for reference only. Please contact us for the latest pictures.
Availability
Price Range
| Quality | Unit Price |
|---|---|
| 1 | |
| 10 | |
| 30 | |
| 100 | |
| 500 | |
| 1,000 |
Due to different local policies, please contact us for the latest quotation.
We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.
Overview
The LM224DR is a high gain instrumentation amplifier from Texas Instruments Integrated Circuits (ICs). It has a maximum supply voltage of 32 V, an operating temperature range of -25 C to +85 C, a Vcm common mode voltage of negative rail to positive rail -1.5 V, an operating supply current of 10 mA, an output current per channel of 30 mA, an en input voltage noise density of 35 nV/sqrt Hz, a slew rate of 0.5 V/us, a gain bandwidth product of 1 MHz, an input offset voltage of 2 mV, and an input bias current of 0.5 nA. It is packaged in a reel.Applications:
The LM224DR is suitable for a wide range of applications, including signal conditioning, data acquisition, and instrumentation. It can be used in medical, industrial, and consumer applications.
Features:
• Maximum supply voltage of 32 V
• Operating temperature range of -25 C to +85 C
• Vcm common mode voltage of negative rail to positive rail -1.5 V
• Operating supply current of 10 mA
• Output current per channel of 30 mA
• En input voltage noise density of 35 nV/sqrt Hz
• Slew rate of 0.5 V/us
• Gain bandwidth product of 1 MHz
• Input offset voltage of 2 mV
• Input bias current of 0.5 nA
Export Classifications & Environmental
Product Parameter
Product Attribute
Articles
This guide provides a direct comparison of HBM generations (up to HBM3e), analyzes the market landscape dominated by SK Hynix, Samsung, and Micron, and offers a crucial procurement checklist. It concludes with a practical case study, advising on capacity and bandwidth requirements (e.g., for a 175B parameter LLM), ensuring businesses can make informed decisions for their high-performance AI systems.
The Nexperia geopolitical crisis, involving legal takeover and counter-sanctions, poses the most severe recent risk to the global semiconductor supply chain, demanding immediate analysis of supply bottlenecks and price impacts for all component buyers.
With its unique properties of radiation hardening, unlimited read/write endurance, and low power consumption, MRAM is becoming the preferred choice for next-generation aerospace memory. This article will provide an in-depth analysis of MRAM's key advantages and applications in the aerospace field.
Comprehensive overview of MR25H40CDF SPI MRAM: specs, applications, case studies, and our real-stock advantages.