Supply original IRFR220NTRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

Supply original IRFR220NTRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo Electronic

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Part Number
IRFR220NTRPBF
Internal code
TCE000008148
Package
-
Serise
HEXFET®
key Attributes
-
Description
MOSFET N-CH 200V 5A DPAK
Min Quantity
1
Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products
Sub Categroy
Transistors - FETs, MOSFETs - Single
Datasheet
-

Availability

In Stock968,693
Avaliable939,593

Price Range

QualityUnit Price
1
10
30
100
500
1,000

Due to different local policies, please contact us for the latest quotation.

Certified Quality Assurance
Responsive 24/7 Support
Free Shipping & Sample Provision
30-Day Return Policy

We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.

Product Attribute

Contact Plating
Tin
Voltage - Rated DC
200V
Drain to Source Breakdown Voltage
200V
Part Status
Active
Radiation Hardening
NO
Number of Terminations
2
REACH Status
REACH Unaffected
ECCN
EAR99
Drain Current-Max (Abs) (ID)
5A
Continuous Drain Current (ID)
5A
Current Rating
5A
Switching Current
5A
Lead Free
Lead Free
Mount
Surface Mount
Mounting Type
Surface Mount
Number of Pins
3
Factory Lead Time
12 Weeks
Published
2004
Reflow Temperature-Max (s)
30
Packaging
Tape & Reel (TR)
Termination
SMD/SMT
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Width
6.22mm
Height
2.52mm
Length
6.7056mm
Gate to Source Voltage (Vgs)
20V
Fall Time (Typ)
12 ns
Element Configuration
Single
Threshold Voltage
4V
Recovery Time
140 ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Pulsed Drain Current-Max (IDM)
20A
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Manufacturer's Part No.
IRFR220NTRPBF
Operating Mode
ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs
600m Ω @ 2.9A, 10V
Manufacturer
Infineon Technologies
Resistance
600MOhm
Series
HEXFET®
Current - Continuous Drain (Id) @ 25°C
5A Tc
Power Dissipation
43W
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Max Junction Temperature (Tj)
175°C
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs
23nC @ 10V
Nominal Vgs
4 V
JEDEC-95 Code
TO-252AA
FET Type
N-Channel
Power Dissipation-Max
43W Tc
Input Capacitance (Ciss) (Max) @ Vds
300pF @ 25V
Sub-Categories
Transistors - FETs, MOSFETs - Single
Avalanche Energy Rating (Eas)
46 mJ
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(th) (Max) @ Id
4V @ 250μA

Product Parameter

Dual Supply Voltage
200V
Number of Channels
1
Number of Elements
1
Turn-Off Delay Time
20 ns
Rise Time
11ns
Turn On Delay Time
6.4 ns

Export Classifications & Environmental

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095

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