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HGTG11N120CND Transistors - IGBTs - Single by ON Semiconductor
HGTG11N120CND is a Transistors - IGBTs - Single model from ON Semiconductor, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - IGBTs - Single product path. Known package information currently points to TO247 under the ON Semiconductor brand listing. IGBT 1200V 43A 298W TO247. TrustCompo combines the available model, brand, hierarchy, and specification details around HGTG11N120CND so buyers can move faster from review to quotation.
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Datasheet
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Key specifications
Series
-
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Category
Transistors - IGBTs - SingleDescription
IGBT 1200V 43A 298W TO247
key Attributes
-
Datasheet
View HGTG11N120CND DatasheetTechnical document
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Globally recognized certifications
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ISO 9001
Quality management processes for more consistent sourcing and handling.
AS9120B
Aerospace-focused distribution controls for traceability and reliability.
ISO 14001
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ESD Control
Electrostatic handling standards to help protect sensitive components.
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Product overview
Overview
The HGTG11N120CND is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for use in various power electronic applications. Manufactured by ON Semiconductor, this device is particularly suited for high-voltage and high-current applications, making it ideal for use in industrial motor drives, power inverters, and other power conversion systems.
Key Features:
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Voltage Rating: The HGTG11N120CND has a maximum collector-emitter voltage (Vce) rating of 1200 volts, allowing it to handle high-voltage applications effectively.
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Current Rating: It can handle a continuous collector current (Ic) of up to 11 amps, making it suitable for medium to high power applications.
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Low On-State Voltage: The device features a low on-state voltage drop, which helps in reducing power losses during operation, enhancing overall efficiency.
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Fast Switching Speed: The HGTG11N120CND is designed for fast switching capabilities, which is crucial for applications requiring rapid on-off control, such as inverters and converters.
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Thermal Performance: The device is packaged in a robust TO-247 package, which provides excellent thermal management. This allows for efficient heat dissipation, ensuring reliable operation even under high load conditions.
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Gate Drive Requirements: The IGBT has a gate threshold voltage (Vgs(th)) that allows for easy interfacing with standard gate drive circuits, facilitating straightforward integration into existing designs.
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Robustness: The HGTG11N120CND is designed to withstand harsh operating conditions, making it suitable for industrial environments.
Applications:
- Motor Drives: Ideal for controlling AC and DC motors in various industrial applications.
- Power Inverters: Used in renewable energy systems, such as solar inverters and wind turbine converters.
- Switching Power Supplies: Suitable for high-efficiency power supply designs.
- Induction Heating: Can be utilized in induction heating applications due to its fast switching capabilities.
Electrical Characteristics:
- Collector-Emitter Saturation Voltage (Vce(sat)): Typically low, which contributes to reduced power losses.
- Gate-Emitter Voltage (Vge): The device can be driven with standard gate voltages, typically around 15V for optimal performance.
Conclusion:
The HGTG11N120CND from ON Semiconductor is a versatile and efficient IGBT that meets the demands of modern power electronics. Its combination of high voltage and current ratings, fast switching capabilities, and robust thermal performance make it an excellent choice for a wide range of applications in the power electronics field.
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Popular Specs Surfaced First
Export Classifications & Environmental
JESD-609 Code
e3
Export Classifications & Environmental
RoHS Status
ROHS3 Compliant
Export Classifications & Environmental
REACH SVHC
No SVHC
Export Classifications & Environmental
HTSUS
8541.29.0095
Export Classifications & Environmental
ECCN Code
EAR99
Export Classifications & Environmental
Moisture Sensitivity Level (MSL)
Not Applicable
JESD-609 Code
e3
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99
Moisture Sensitivity Level (MSL)
Not Applicable
Terminal Finish
Tin (Sn)
Turn On Delay Time
23 ns
Number Of Elements
1
Turn-Off Delay Time
180 ns
Input Type
Standard
IGBT Type
NPT
Current - Collector Pulsed (Icm)
80A
Voltage - Collector Emitter Breakdown (Max)
1200V
Reverse Recovery Time
70 ns
Mounting Type
Through Hole
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Packaging
Tube
Factory Lead Time
5 Weeks
Published
2016
Element Configuration
Single
Part Status
Not For New Designs
Manufacturer
ON Semiconductor
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Package / Case
TO-247-3
Radiation Hardening
No
Pbfree Code
yes
Mount
Through Hole
Number Of Pins
3
Number Of Terminations
3
Lifecycle Status
ACTIVE, NOT REC (Last Updated: 2 days ago)
Current Rating
43A
Transistor Application
MOTOR CONTROL
Sub-Categories
Transistors - IGBTs - Single
Voltage - Rated DC
1.2kV
HTS Code
8541.29.00.95
Collector Emitter Breakdown Voltage
1.2kV
Additional Feature
LOW CONDUCTION LOSS
Power Dissipation
298W
Collector Emitter Voltage (VCEO)
1.2kV
Max Power Dissipation
298W
Gate Charge
100nC
Polarity
NPN
Weight
6.39g
Collector Emitter Saturation Voltage
2.1V
Turn On Time
33 ns
Turn Off Time-Nom (Toff)
570 ns
Manufacturer'S Part No.
HGTG11N120CND
Max Collector Current
43A
Switching Energy
950μJ (on), 1.3mJ (off)
Td (On/Off) @ 25°C
23ns/180ns
Vce(On) (Max) @ Vge, Ic
2.4V @ 15V, 11A
Test Condition
960V, 11A, 10 Ω, 15V
Common questions
Product FAQ
Quick answers for buyers reviewing HGTG11N120CND, stock, documentation, and sourcing steps.
What is HGTG11N120CND?
HGTG11N120CND is a Transistors - IGBTs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for HGTG11N120CND?
HGTG11N120CND is listed with package reference TO247. The current product description is IGBT 1200V 43A 298W TO247, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is HGTG11N120CND available in stock?
This page currently shows 27028 units in stock and 27028 units available for HGTG11N120CND. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for HGTG11N120CND?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for HGTG11N120CND by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for HGTG11N120CND?
Yes. This page links to the datasheet for HGTG11N120CND by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify HGTG11N120CND before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for HGTG11N120CND before approving the order.
Transistors - IGBTs - Single
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