Supply original APT50GN60BDQ2G, Transistors - IGBTs - Single, by Microsemi

IGBT 600V 107A 366W TO247

RoHS
Datasheet
Supply original APT50GN60BDQ2G, Transistors - IGBTs - Single, by Microsemi | TrustCompo

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Part Number

APT50GN60BDQ2G

Internal code

TCE000076472

Package

TO247

Manufacturer

Microsemi

Key specifications

Serise

-

Min Quantity

1

Description

IGBT 600V 107A 366W TO247

key Attributes

-

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Product overview

Overview

IGBT 600V 107A 366W TO247

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

Mounting Type

Through Hole

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Lead Free

Product Attribute

Packaging

Tube

Part Status
Active
Mounting Type
Through Hole
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Packaging
Tube
Factory Lead Time
25 Weeks
Published
1999
Element Configuration
Single
Operating Temperature
-55°C~175°C TJ
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
JEDEC-95 Code
TO-247AD
Package / Case
TO-247-3
Radiation Hardening
No
Pbfree Code
yes
Mount
Through Hole
Pin Count
3
Number Of Terminations
3
Voltage - Rated DC
600V
Length
21.46mm
Case Connection
COLLECTOR
Subcategory
Insulated Gate BIP Transistors
Sub-Categories
Transistors - IGBTs - Single
Polarity/Channel Type
N-CHANNEL
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.5V
Collector Emitter Voltage (VCEO)
600V
Manufacturer
Microsemi
Transistor Application
POWER CONTROL
Weight
38.000013g
Height
5.31mm
Width
16.26mm
Gate-Emitter Thr Voltage-Max
6.5V
Turn On Time
45 ns
Gate-Emitter Voltage-Max
30V
Turn Off Time-Nom (Toff)
400 ns
Gate Charge
325nC
Switching Energy
1185μJ (on), 1565μJ (off)
Current Rating
107A
Max Power Dissipation
366W
Max Collector Current
107A
Vce(On) (Max) @ Vge, Ic
1.85V @ 15V, 50A
Td (On/Off) @ 25°C
20ns/230ns
Test Condition
400V, 50A, 4.3 Ω, 15V
Manufacturer'S Part No.
APT50GN60BDQ2G
Continuous Collector Current
107A
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
JESD-609 Code
e1
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
R-PSFM-T3
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Number Of Elements
1
Turn On Delay Time
20 ns
Turn-Off Delay Time
230 ns
Input Type
Standard
Current - Collector Pulsed (Icm)
150A
IGBT Type
Trench Field Stop

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What is APT50GN60BDQ2G?

APT50GN60BDQ2G is a Transistors - IGBTs - Single component from Microsemi. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for APT50GN60BDQ2G?

APT50GN60BDQ2G is listed with package reference TO247. The current product description is IGBT 600V 107A 366W TO247, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is APT50GN60BDQ2G available in stock?

This page currently shows 24120 units in stock and 22572 units available for APT50GN60BDQ2G. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Is a datasheet available for APT50GN60BDQ2G?

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