Supply original SIR476DP-T1-GE3, Transistors - FETs, MOSFETs - Single, by Vishay

MOSFET N-CH 25V 60A PPAK SO-8

RoHS
Datasheet
Supply original SIR476DP-T1-GE3, Transistors - FETs, MOSFETs - Single, by Vishay | TrustCompo

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Part Number

SIR476DP-T1-GE3

Internal code

TCE000069263

Package

-

Manufacturer

Vishay

Key specifications

Serise

TrenchFET®

Min Quantity

1

Description

MOSFET N-CH 25V 60A PPAK SO-8

key Attributes

-

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Product overview

Overview

MOSFET N-CH 25V 60A PPAK SO-8

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Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

HTSUS

8541.29.0095

Export Classifications & Environmental

JESD-30 Code

R-XDSO-C5

Export Classifications & Environmental

ECCN Code

EAR99

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
JESD-30 Code
R-XDSO-C5
ECCN Code
EAR99
ECCN
EAR99
Mounting Type
Surface Mount
Published
2005
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Element Configuration
Single
Manufacturer
Vishay
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Terminal Form
C BEND
Weight
506.605978mg
Series
TrenchFET®
Vgs(Th) (Max) @ Id
2.5V @ 250μA
Package / Case
PowerPAK® SO-8
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Mount
Surface Mount
Pbfree Code
yes
Number Of Terminations
5
Number Of Pins
8
Pin Count
8
Length
4.9mm
Gate To Source Voltage (Vgs)
20V
Drain To Source Breakdown Voltage
25V
Current - Continuous Drain (Id) @ 25°C
60A Tc
Threshold Voltage
2.5V
Fall Time (Typ)
48 ns
Continuous Drain Current (ID)
60A
Height
1.04mm
Width
5.89mm
Drain Current-Max (Abs) (ID)
45A
Power Dissipation-Max
6.25W Ta 104W Tc
Gate Charge (Qg) (Max) @ Vgs
135nC @ 10V
Manufacturer'S Part No.
SIR476DP-T1-GE3
Input Capacitance (Ciss) (Max) @ Vds
6150pF @ 10V
Rds On (Max) @ Id, Vgs
1.7m Ω @ 20A, 10V
Terminal Finish
Matte Tin (Sn)
Turn On Delay Time
50 ns
Number Of Channels
1
Number Of Elements
1
Turn-Off Delay Time
60 ns
Rise Time
31ns

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What is SIR476DP-T1-GE3?

SIR476DP-T1-GE3 is a Transistors - FETs, MOSFETs - Single component from Vishay. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for SIR476DP-T1-GE3?

SIR476DP-T1-GE3 is listed with package reference -. The current product description is MOSFET N-CH 25V 60A PPAK SO-8, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is SIR476DP-T1-GE3 available in stock?

This page currently shows 29155 units in stock and 27911 units available for SIR476DP-T1-GE3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for SIR476DP-T1-GE3?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for SIR476DP-T1-GE3 by Vishay. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for SIR476DP-T1-GE3?

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