Supply original FCA35N60, Transistors - FETs, MOSFETs - Single, by ON Semiconductor

MOSFET N-CH 600V 35A TO-3PN

RoHS
Datasheet
Supply original FCA35N60, Transistors - FETs, MOSFETs - Single, by ON Semiconductor | TrustCompo

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Part Number

FCA35N60

Internal code

TCE000069771

Package

TO-

Manufacturer

ON Semiconductor

Key specifications

Serise

SuperFET™

Min Quantity

1

Description

MOSFET N-CH 600V 35A TO-3PN

key Attributes

-

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Product overview

Overview

MOSFET N-CH 600V 35A TO-3PN

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

Mounting Type

Through Hole

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Packaging

Tube

Product Attribute

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Part Status
Active
Mounting Type
Through Hole
REACH Status
REACH Unaffected
ECCN
EAR99
Packaging
Tube
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
12 Weeks
Length
15.8mm
Published
2013
Element Configuration
Single
Manufacturer
ON Semiconductor
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Vgs (Max)
±30V
Radiation Hardening
No
Pbfree Code
yes
Mount
Through Hole
Number Of Pins
3
Number Of Terminations
3
Width
5mm
Continuous Drain Current (ID)
35A
Drive Voltage (Max Rds On,Min Rds On)
10V
Threshold Voltage
3V
Vgs(Th) (Max) @ Id
5V @ 250μA
Gate To Source Voltage (Vgs)
30V
Series
SuperFET™
Current - Continuous Drain (Id) @ 25°C
35A Tc
HTS Code
8541.29.00.95
Drain To Source Breakdown Voltage
650V
Package / Case
TO-3P-3, SC-65-3
Weight
6.401g
Pulsed Drain Current-Max (IDM)
105A
Height
20.1mm
Fall Time (Typ)
73 ns
Gate Charge (Qg) (Max) @ Vgs
181nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
6640pF @ 25V
Manufacturer'S Part No.
FCA35N60
Rds On (Max) @ Id, Vgs
98m Ω @ 17.5A, 10V
Drain-Source On Resistance-Max
0.098Ohm
Avalanche Energy Rating (Eas)
1455 mJ
Power Dissipation-Max
312.5W Tc
Power Dissipation
312.5W
JESD-609 Code
e3
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99
Moisture Sensitivity Level (MSL)
Not Applicable
Turn On Delay Time
34 ns
Terminal Finish
Tin (Sn)
Turn-Off Delay Time
105 ns
Number Of Elements
1
Rise Time
120ns
Drain To Source Voltage (Vdss)
600V

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What is FCA35N60?

FCA35N60 is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for FCA35N60?

FCA35N60 is listed with package reference TO-. The current product description is MOSFET N-CH 600V 35A TO-3PN, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is FCA35N60 available in stock?

This page currently shows 86428 units in stock and 17828 units available for FCA35N60. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for FCA35N60 by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for FCA35N60?

Yes. This page links to the datasheet for FCA35N60 by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

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Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for FCA35N60 before approving the order.

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