What is SIA429DJT-T1-GE3?
SIA429DJT-T1-GE3 is a Transistors - FETs, MOSFETs - Single component from Vishay. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
Supply original SIA429DJT-T1-GE3, Transistors - FETs, MOSFETs - Single, by Vishay
MOSFET P-CH 20V 12A SC-70
RoHS
Datasheet
Pictures are for reference only. Please contact us for the latest pictures.
Key specifications
Serise
TrenchFET®
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Categroy
Transistors - FETs, MOSFETs - SingleDescription
MOSFET P-CH 20V 12A SC-70
key Attributes
-
Technical document
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Globally recognized certifications
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ISO 9001
Quality management processes for more consistent sourcing and handling.
AS9120B
Aerospace-focused distribution controls for traceability and reliability.
ISO 14001
Environmental management discipline across warehouse and operating workflows.
ESD Control
Electrostatic handling standards to help protect sensitive components.
Authenticity Verification
CoC Available on Request
Pre-Shipment Inspection
Responsive RFQ Support
Why buyers trust this sourcing flow
Our quality workflow is designed to reduce counterfeit risk and support confident procurement. Components are reviewed through documented handling and inspection steps so buyers can evaluate sourcing with stronger authenticity controls.
Structured product content
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Product overview
Overview
MOSFET P-CH 20V 12A SC-70
Full technical breakdown
Detailed Specifications
Review grouped attributes and parameters without scanning one oversized table.
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Popular Specs Surfaced First
Product Attribute
Part Status
Active
Product Attribute
ECCN
EAR99
Product Attribute
Lead Free
Lead Free
Product Attribute
Mounting Type
Surface Mount
Product Attribute
Factory Lead Time
14 Weeks
Product Attribute
Packaging
Tape & Reel (TR)
Part Status
Active
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
14 Weeks
Packaging
Tape & Reel (TR)
Published
2014
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Element Configuration
Single
Height
750μm
Manufacturer
Vishay
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
FET Type
P-Channel
Subcategory
Other Transistors
Vgs(Th) (Max) @ Id
1V @ 250μA
Current - Continuous Drain (Id) @ 25°C
12A Tc
Series
TrenchFET®
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
6
Pin Count
6
Vgs (Max)
±8V
Gate To Source Voltage (Vgs)
8V
Drain To Source Breakdown Voltage
-20V
Number Of Terminations
3
Fall Time (Typ)
25 ns
Width
2.05mm
Continuous Drain Current (ID)
10.6A
Pulsed Drain Current-Max (IDM)
30A
Length
2.05mm
Power Dissipation-Max
3.5W Ta 19W Tc
Power Dissipation
3.5W
Package / Case
PowerPAK® SC-70-6
Drive Voltage (Max Rds On,Min Rds On)
1.5V 4.5V
Nominal Vgs
-400 mV
Gate Charge (Qg) (Max) @ Vgs
62nC @ 8V
Manufacturer'S Part No.
SIA429DJT-T1-GE3
Drain-Source On Resistance-Max
0.0205Ohm
Rds On (Max) @ Id, Vgs
20.5m Ω @ 6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds
1750pF @ 10V
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
S-PDSO-N3
Terminal Finish
Matte Tin (Sn) - annealed
Number Of Channels
1
Number Of Elements
1
Drain To Source Voltage (Vdss)
20V
Turn-Off Delay Time
70 ns
Rise Time
25ns
Turn On Delay Time
22 ns
Common questions
Product FAQ
Quick answers for buyers reviewing SIA429DJT-T1-GE3, stock, documentation, and sourcing steps.
What package and description are listed for SIA429DJT-T1-GE3?
SIA429DJT-T1-GE3 is listed with package reference SC-70. The current product description is MOSFET P-CH 20V 12A SC-70, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is SIA429DJT-T1-GE3 available in stock?
This page currently shows 47158 units in stock and 22611 units available for SIA429DJT-T1-GE3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for SIA429DJT-T1-GE3?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for SIA429DJT-T1-GE3 by Vishay. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for SIA429DJT-T1-GE3?
Yes. This page links to the datasheet for SIA429DJT-T1-GE3 by Vishay, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify SIA429DJT-T1-GE3 before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for SIA429DJT-T1-GE3 before approving the order.
Transistors - FETs, MOSFETs - Single
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