Supply original SI2302CDS-T1-E3, Transistors - FETs, MOSFETs - Single, by Vishay

MOSFET N-CH 20V 2.6A SOT-23

RoHS
Datasheet
Supply original SI2302CDS-T1-E3, Transistors - FETs, MOSFETs - Single, by Vishay | TrustCompo

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Part Number

SI2302CDS-T1-E3

Internal code

TCE000048009

Package

SOT-23

Manufacturer

Vishay

Key specifications

Serise

TrenchFET®

Min Quantity

1

Description

MOSFET N-CH 20V 2.6A SOT-23

key Attributes

-

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Product overview

Overview

MOSFET N-CH 20V 2.6A SOT-23

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Lead Free

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Factory Lead Time

14 Weeks

Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
14 Weeks
Packaging
Tape & Reel (TR)
Published
2012
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Max Junction Temperature (Tj)
150°C
Element Configuration
Single
Manufacturer
Vishay
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Power Dissipation
710mW
Operating Temperature
-55°C~150°C TJ
Package / Case
TO-236-3, SC-59, SOT-23-3
Subcategory
FET General Purpose Powers
Series
TrenchFET®
Height
1.12mm
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
3
Pin Count
3
Vgs (Max)
±8V
Gate To Source Voltage (Vgs)
8V
Number Of Terminations
3
Width
1.4mm
Length
3.04mm
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Current - Continuous Drain (Id) @ 25°C
2.6A Ta
Continuous Drain Current (ID)
2.6A
Weight
1.437803g
Drain To Source Breakdown Voltage
20V
Fall Time (Typ)
7 ns
Power Dissipation-Max
710mW Ta
Vgs(Th) (Max) @ Id
850mV @ 250μA
Resistance
57mOhm
Rds On (Max) @ Id, Vgs
57m Ω @ 3.6A, 4.5V
Input Capacitance
112pF
Threshold Voltage
400mV
Manufacturer'S Part No.
SI2302CDS-T1-E3
Gate Charge (Qg) (Max) @ Vgs
5.5nC @ 4.5V
Terminal Finish
Matte Tin (Sn)
Number Of Channels
1
Number Of Elements
1
Turn-Off Delay Time
30 ns
Turn On Delay Time
8 ns
Rise Time
7ns
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
HTSUS
8541.21.0095
ECCN Code
EAR99

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What is SI2302CDS-T1-E3?

SI2302CDS-T1-E3 is a Transistors - FETs, MOSFETs - Single component from Vishay. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for SI2302CDS-T1-E3?

SI2302CDS-T1-E3 is listed with package reference SOT-23. The current product description is MOSFET N-CH 20V 2.6A SOT-23, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is SI2302CDS-T1-E3 available in stock?

This page currently shows 27000 units in stock and 27000 units available for SI2302CDS-T1-E3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for SI2302CDS-T1-E3?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for SI2302CDS-T1-E3 by Vishay. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for SI2302CDS-T1-E3?

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