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Request evaluation samplesSupply original IRFS4127TRLPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies
IRFS4127TRLPBF is a Transistors - FETs, MOSFETs - Single model from Infineon Technologies, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to TO-263-3 under the Infineon Technologies brand listing. MOSFET N-CH 200V 72A D2PAK. TrustCompo combines the available model, brand, hierarchy, and specification details around IRFS4127TRLPBF so buyers can move faster from review to quotation.
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Datasheet
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Key specifications
Series
HEXFET®
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Category
Transistors - FETs, MOSFETs - SingleDescription
MOSFET N-CH 200V 72A D2PAK
key Attributes
-
Datasheet
View IRFS4127TRLPBF DatasheetTechnical document
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Globally recognized certifications
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ISO 9001
Quality management processes for more consistent sourcing and handling.
AS9120B
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ISO 14001
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ESD Control
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Product overview
Overview
The IRFS4127TRLPBF is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This component is designed for a variety of applications, including power management, motor control, and DC-DC converters, where efficient switching and low on-resistance are critical.
Key Features:
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N-Channel Configuration: The IRFS4127TRLPBF is an N-channel MOSFET, which means it is designed to conduct when a positive voltage is applied to the gate relative to the source. This configuration is commonly used in high-side and low-side switching applications.
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Voltage Rating: The device has a maximum drain-source voltage (V_DS) rating of 55V, making it suitable for applications that require handling moderate voltage levels.
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Current Rating: It can handle a continuous drain current (I_D) of up to 120A at a specified temperature, which allows it to manage significant power loads effectively.
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On-Resistance (R_DS(on)): One of the standout features of the IRFS4127TRLPBF is its low on-resistance, typically around 0.015 ohms at a gate-source voltage (V_GS) of 10V. This low R_DS(on) minimizes power losses during operation, enhancing overall efficiency.
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Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically between 2V and 4V, which indicates the voltage required to start turning the MOSFET on. This feature allows for compatibility with various control circuits.
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Package Type: The IRFS4127TRLPBF is available in a TO-220 package, which provides good thermal performance and is suitable for heat dissipation in high-power applications. The package design also facilitates easy mounting on PCBs.
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Thermal Characteristics: The device has a maximum junction temperature (T_J) rating of 175°C, allowing it to operate in demanding thermal environments. Its thermal resistance from junction to case (RθJC) is low, which helps in effective heat management.
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Fast Switching Speed: The IRFS4127TRLPBF is designed for fast switching applications, making it ideal for use in high-frequency circuits. This characteristic is essential for applications like PWM (Pulse Width Modulation) control.
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RoHS Compliance: The component is RoHS compliant, meaning it is free from hazardous substances, making it suitable for environmentally conscious designs.
Applications:
- Power Supply Circuits: Used in switch-mode power supplies (SMPS) for efficient voltage regulation.
- Motor Drives: Ideal for driving DC motors and brushless DC motors due to its high current handling capability.
- Battery Management Systems: Utilized in battery protection circuits and charging applications.
- LED Drivers: Suitable for driving high-power LEDs with efficient current control.
Conclusion:
The IRFS4127TRLPBF from Infineon Technologies is a robust and efficient N-channel MOSFET that offers excellent performance for a wide range of power management applications. Its combination of high current capacity, low on-resistance, and fast switching capabilities makes it a preferred choice for engineers looking to optimize their designs for efficiency and reliability.
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Popular Specs Surfaced First
Export Classifications & Environmental
JESD-609 Code
e3
Export Classifications & Environmental
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Export Classifications & Environmental
RoHS Status
ROHS3 Compliant
Export Classifications & Environmental
JESD-30 Code
R-PSSO-G2
Export Classifications & Environmental
HTSUS
8541.29.0095
Export Classifications & Environmental
ECCN Code
EAR99
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Rise Time
18ns
Number Of Elements
1
Turn On Delay Time
17 ns
Turn-Off Delay Time
56 ns
Part Status
Active
Published
2008
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
12 Weeks
Packaging
Tape & Reel (TR)
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Qualification Status
Not Qualified
Element Configuration
Single
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Avalanche Energy Rating (Eas)
250 mJ
Reflow Temperature-Max (S)
30
Mount
Surface Mount
Number Of Pins
3
Number Of Terminations
2
Gate To Source Voltage (Vgs)
20V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs(Th) (Max) @ Id
5V @ 250μA
Height
4.826mm
Length
10.668mm
Drain To Source Breakdown Voltage
200V
Resistance
22MOhm
Fall Time (Typ)
22 ns
Gate Charge (Qg) (Max) @ Vgs
150nC @ 10V
Power Dissipation-Max
375W Tc
Width
9.652mm
Power Dissipation
375W
Continuous Drain Current (ID)
72A
Rds On (Max) @ Id, Vgs
22m Ω @ 44A, 10V
Input Capacitance (Ciss) (Max) @ Vds
5380pF @ 50V
Current - Continuous Drain (Id) @ 25°C
72A Tc
Manufacturer'S Part No.
IRFS4127TRLPBF
Common questions
Product FAQ
Quick answers for buyers reviewing IRFS4127TRLPBF, stock, documentation, and sourcing steps.
What is IRFS4127TRLPBF?
IRFS4127TRLPBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for IRFS4127TRLPBF?
IRFS4127TRLPBF is listed with package reference TO-263-3. The current product description is MOSFET N-CH 200V 72A D2PAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is IRFS4127TRLPBF available in stock?
This page currently shows 75716 units in stock and 41360 units available for IRFS4127TRLPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for IRFS4127TRLPBF?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for IRFS4127TRLPBF by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for IRFS4127TRLPBF?
Yes. This page links to the datasheet for IRFS4127TRLPBF by Infineon Technologies, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify IRFS4127TRLPBF before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for IRFS4127TRLPBF before approving the order.
Transistors - FETs, MOSFETs - Single
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