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IRF8113TRPBF Transistors - FETs, MOSFETs - Single by Infineon Technologies
IRF8113TRPBF is a Transistors - FETs, MOSFETs - Single model from Infineon Technologies, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to 8-SOIC under the Infineon Technologies brand listing. MOSFET N-CH 30V 17.2A 8-SOIC. TrustCompo combines the available model, brand, hierarchy, and specification details around IRF8113TRPBF so buyers can move faster from review to quotation.
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Datasheet
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Key specifications
Series
HEXFET®
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Category
Transistors - FETs, MOSFETs - SingleDescription
MOSFET N-CH 30V 17.2A 8-SOIC
key Attributes
-
Datasheet
View IRF8113TRPBF DatasheetTechnical document
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Globally recognized certifications
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ISO 9001
Quality management processes for more consistent sourcing and handling.
AS9120B
Aerospace-focused distribution controls for traceability and reliability.
ISO 14001
Environmental management discipline across warehouse and operating workflows.
ESD Control
Electrostatic handling standards to help protect sensitive components.
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Product overview
Overview
The IRF8113TRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This device is designed for high-efficiency power management applications, making it suitable for a variety of uses in both consumer and industrial electronics.
Key Features:
- Type: N-channel MOSFET
- Package: The IRF8113TRPBF is typically housed in a TO-220 package, which provides good thermal performance and is suitable for mounting on heatsinks.
- Voltage Rating: The device has a maximum drain-source voltage (V_DS) of 30V, allowing it to handle moderate voltage applications effectively.
- Current Rating: It can handle a continuous drain current (I_D) of up to 60A, making it suitable for high-current applications.
- R_DS(on): The on-resistance (R_DS(on)) is low, typically around 10 mΩ at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses during operation.
- Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is in the range of 2V to 4V, which means it begins to conduct at relatively low gate voltages, allowing for easier drive requirements.
- Switching Speed: The IRF8113TRPBF features fast switching capabilities, making it suitable for applications such as DC-DC converters, motor drivers, and other switching power supplies.
- Thermal Characteristics: The device has a maximum junction temperature (T_J) of 175°C, which allows for operation in demanding thermal environments. Its thermal resistance (RθJA) is low, ensuring efficient heat dissipation.
Applications:
- Power Management: Ideal for use in power supplies, converters, and inverters.
- Motor Control: Suitable for driving motors in various applications, including robotics and industrial automation.
- Lighting: Can be used in LED drivers and other lighting control applications.
- Battery Management: Effective in battery protection circuits and charging applications.
Electrical Characteristics:
- Input Capacitance (C_iss): Typically around 2000 pF, which affects the drive requirements and switching speed.
- Output Capacitance (C_oss): Approximately 200 pF, influencing the overall switching performance.
- Reverse Recovery Time (t_rr): The device exhibits a fast reverse recovery time, which is beneficial in high-frequency applications.
Compliance and Packaging:
The IRF8113TRPBF is compliant with RoHS (Restriction of Hazardous Substances) standards, ensuring it is environmentally friendly. The TO-220 package allows for easy handling and integration into various circuit designs.
Conclusion:
The IRF8113TRPBF from Infineon Technologies is a robust and versatile N-channel MOSFET that excels in high-efficiency applications. Its combination of high current handling, low on-resistance, and fast switching capabilities makes it a preferred choice for engineers looking to optimize power management solutions in a wide range of electronic devices.
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Popular Specs Surfaced First
Product Attribute
Part Status
Active
Product Attribute
REACH Status
REACH Unaffected
Product Attribute
ECCN
EAR99
Product Attribute
Mounting Type
Surface Mount
Product Attribute
Factory Lead Time
12 Weeks
Product Attribute
Published
2005
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Mounting Type
Surface Mount
Factory Lead Time
12 Weeks
Published
2005
Packaging
Tape & Reel (TR)
Width
3.9878mm
Termination
SMD/SMT
Lead Free
Contains Lead, Lead Free
Package / Case
8-SOIC (0.154, 3.90mm Width)
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Operating Temperature
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Length
4.9784mm
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
8
Power Dissipation
2.5W
Gate To Source Voltage (Vgs)
20V
Power Dissipation-Max
2.5W Ta
Voltage - Rated DC
30V
Drain To Source Breakdown Voltage
30V
Height
1.4986mm
Row Spacing
6.3 mm
Fall Time (Typ)
3.5 ns
Vgs(Th) (Max) @ Id
2.2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
36nC @ 4.5V
Nominal Vgs
2.2 V
Threshold Voltage
2.2V
Resistance
5.6MOhm
Manufacturer'S Part No.
IRF8113TRPBF
Rds On (Max) @ Id, Vgs
5.6m Ω @ 17.2A, 10V
Continuous Drain Current (ID)
17.2A
Current - Continuous Drain (Id) @ 25°C
17.2A Ta
Current Rating
16.6A
Input Capacitance (Ciss) (Max) @ Vds
2910pF @ 15V
Turn On Delay Time
13 ns
Turn-Off Delay Time
17 ns
Number Of Elements
1
Configuration
SINGLE
Dual Supply Voltage
30V
Rise Time
8.9ns
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99
Common questions
Product FAQ
Quick answers for buyers reviewing IRF8113TRPBF, stock, documentation, and sourcing steps.
What is IRF8113TRPBF?
IRF8113TRPBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for IRF8113TRPBF?
IRF8113TRPBF is listed with package reference 8-SOIC. The current product description is MOSFET N-CH 30V 17.2A 8-SOIC, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is IRF8113TRPBF available in stock?
This page currently shows 26990 units in stock and 23365 units available for IRF8113TRPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for IRF8113TRPBF?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for IRF8113TRPBF by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for IRF8113TRPBF?
Yes. This page links to the datasheet for IRF8113TRPBF by Infineon Technologies, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify IRF8113TRPBF before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for IRF8113TRPBF before approving the order.
Transistors - FETs, MOSFETs - Single
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