What is FDMB3800N?
FDMB3800N is a Transistors - FETs, MOSFETs - Arrays component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
Supply original FDMB3800N, Transistors - FETs, MOSFETs - Arrays, by ON Semiconductor
MOSFET 2N-CH 30V 4.8A MICROFET
RoHS
Datasheet
Pictures are for reference only. Please contact us for the latest pictures.
Key specifications
Serise
PowerTrench®
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Categroy
Transistors - FETs, MOSFETs - ArraysDescription
MOSFET 2N-CH 30V 4.8A MICROFET
key Attributes
-
Technical document
Open The Official Datasheet
Review the latest datasheet for FDMB3800N from ON Semiconductor in a separate tab so engineers and buyers can check package, electrical characteristics, and application details without leaving this product page.
Why request a quote
Use the RFQ step to confirm the commercial and documentation details buyers usually need before placing an order.
Confirm stock and lead-time expectations
Check CoC or traceability support
Align inspection and fulfillment details
Trust signals
Globally recognized certifications
Visible certifications work best when they are paired with clear operational promises around traceability, handling, and inspection.
ISO 9001
Quality management processes for more consistent sourcing and handling.
AS9120B
Aerospace-focused distribution controls for traceability and reliability.
ISO 14001
Environmental management discipline across warehouse and operating workflows.
ESD Control
Electrostatic handling standards to help protect sensitive components.
Authenticity Verification
CoC Available on Request
Pre-Shipment Inspection
Responsive RFQ Support
Why buyers trust this sourcing flow
Our quality workflow is designed to reduce counterfeit risk and support confident procurement. Components are reviewed through documented handling and inspection steps so buyers can evaluate sourcing with stronger authenticity controls.
Structured product content
Review The Product The Way Buyers Actually Evaluate It
Jump between overview, specs, and related sourcing content without scanning one long uninterrupted page.
Product overview
Overview
MOSFET 2N-CH 30V 4.8A MICROFET
Full technical breakdown
Detailed Specifications
Review grouped attributes and parameters without scanning one oversized table.
Fast scan
Popular Specs Surfaced First
Product Parameter
FET Technology
METAL-OXIDE SEMICONDUCTOR
Product Parameter
Number Of Elements
2
Product Parameter
Drain To Source Voltage (Vdss)
30V
Product Parameter
Turn-Off Delay Time
21 ns
Product Parameter
Terminal Finish
Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Product Parameter
Turn On Delay Time
8 ns
FET Technology
METAL-OXIDE SEMICONDUCTOR
Number Of Elements
2
Drain To Source Voltage (Vdss)
30V
Turn-Off Delay Time
21 ns
Terminal Finish
Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Turn On Delay Time
8 ns
Rise Time
5ns
FET Feature
Logic Level Gate
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-609 Code
e4
HTSUS
8541.21.0095
ECCN Code
EAR99
Part Status
Active
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
23 Weeks
Packaging
Tape & Reel (TR)
Manufacturer
ON Semiconductor
Height
750μm
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Vgs(Th) (Max) @ Id
3V @ 250μA
Series
PowerTrench®
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
8
Number Of Terminations
8
Gate To Source Voltage (Vgs)
20V
Length
3mm
Element Configuration
Dual
Drain To Source Breakdown Voltage
30V
Package / Case
8-PowerWDFN
Power Dissipation
1.6W
Max Power Dissipation
1.6W
Fall Time (Typ)
5 ns
Nominal Vgs
1.9 V
Sub-Categories
Transistors - FETs, MOSFETs - Arrays
Resistance
40mOhm
FET Type
2 N-Channel (Dual)
Threshold Voltage
1.9V
Feedback Cap-Max (Crss)
60 pF
Continuous Drain Current (ID)
4.8A
Width
1.9mm
Input Capacitance (Ciss) (Max) @ Vds
465pF @ 15V
Gate Charge (Qg) (Max) @ Vgs
5.6nC @ 5V
Weight
47mg
Manufacturer'S Part No.
FDMB3800N
Power - Max
750mW
Rds On (Max) @ Id, Vgs
40m Ω @ 4.8A, 10V
Common questions
Product FAQ
Quick answers for buyers reviewing FDMB3800N, stock, documentation, and sourcing steps.
What package and description are listed for FDMB3800N?
FDMB3800N is listed with package reference -. The current product description is MOSFET 2N-CH 30V 4.8A MICROFET, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is FDMB3800N available in stock?
This page currently shows 92394 units in stock and 49788 units available for FDMB3800N. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for FDMB3800N?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for FDMB3800N by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for FDMB3800N?
Yes. This page links to the datasheet for FDMB3800N by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify FDMB3800N before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for FDMB3800N before approving the order.
Transistors - FETs, MOSFETs - Arrays
Recommended Products
Explore more parts from the same subcategory to compare fit, stock, and sourcing options.
FDG6301N
133 purchased
SC70-6
RoHS
Datasheet
MOSFET 2N-CH 25V 0.22A SC70-6
Reference price
$0.08Add to RFQ list
SI3993CDV-T1-GE3
165 purchased
TSOP
RoHS
Datasheet
MOSFET 2P-CH 30V 2.9A 6-TSOP
Reference price
$0.32Add to RFQ list
IRF7306TRPBF
182 purchased
8-SOIC
RoHS
Datasheet
MOSFET 2P-CH 30V 3.6A 8-SOIC
Reference price
$0.34Add to RFQ list
FDS6982AS
153 purchased
SOIC
RoHS
Datasheet
MOSFET 2N-CH 30V 6.3A/8.6A 8-SO
Reference price
$0.77Add to RFQ list
FDY3000NZ
153 purchased
SC89
RoHS
Datasheet
MOSFET 2N-CH 20V 0.6A SC89
Reference price
$0.16Add to RFQ list
FDS4935BZ
163 purchased
8-SOIC
RoHS
Datasheet
MOSFET 2P-CH 30V 6.9A 8-SOIC
Reference price
$0.28Add to RFQ list
More sourcing insights
Articles
Jul 11, 2026
2026 Q3 Wide-Bandgap Power Read: Where SiC Is Scaling, Where GaN Is Winning, and Why Silicon Still Matters
wide-bandgap semiconductorsSiCGaNpower electronics
A Q3 2026 read on SiC, GaN, and silicon power semiconductors: where wide-bandgap devices are winning now, where silicon still holds, and what engineers and sourcing teams should watch.
Jul 8, 2026
Texas Instruments Lead Time and Price Pressure in 2026: What Analog and Power Buyers Should Do Now
Texas Instrumentsanalog ICpower management IClead time
A buyer-facing framework for Texas Instruments analog and power IC exposure in 2026, covering what is confirmed, where price and lead-time pressure is most likely to show up, and which actions sourcing teams should take first.
Jul 3, 2026
How to Read a Product Change Notification (PCN): TI and Renesas Case Studies
PCNproduct change notificationelectronics procurementTI
Learn how to read a Product Change Notification (PCN), separate PCN vs PDN vs EOL, and decide which supplier changes need tracking, validation, or engineering escalation.