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MicrosemiDiscrete Semiconductor ProductsDiodes - Rectifiers - Single

Supply original 1N6622US, Diodes - Rectifiers - Single, by Microsemi

DIODE GEN PURP 660V 1.2A A-MELF

RoHS
Datasheet
Supply original 1N6622US, Diodes - Rectifiers - Single, by Microsemi | TrustCompo

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Part Number

1N6622US

Internal code

TCE000080832

Package

-

Manufacturer

Microsemi

Key specifications

Serise

-

Min Quantity

1

Category

Discrete Semiconductor Products

Sub Categroy

Diodes - Rectifiers - Single

Description

DIODE GEN PURP 660V 1.2A A-MELF

key Attributes

-

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Product overview

Overview

DIODE GEN PURP 660V 1.2A A-MELF

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Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Packaging

Bulk

Product Attribute

Min Operating Temperature

-65°C

Product Attribute

Lead Free

Contains Lead

Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Packaging
Bulk
Min Operating Temperature
-65°C
Lead Free
Contains Lead
Mounting Type
Surface Mount
Published
1997
Factory Lead Time
17 Weeks
Contact Plating
Lead, Tin
Reach Compliance Code
not_compliant
Qualification Status
Not Qualified
Element Configuration
Single
Categories
Discrete Semiconductor Products
Technology
AVALANCHE
HTS Code
8541.10.00.80
Sub-Categories
Diodes - Rectifiers - Single
Additional Feature
HIGH RELIABILITY
Terminal Form
WRAP AROUND
Terminal Position
END
Pbfree Code
no
Mount
Surface Mount
Number Of Terminations
2
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reflow Temperature-Max (S)
NOT SPECIFIED
Number Of Pins
2
Pin Count
2
Max Operating Temperature
150°C
Case Connection
ISOLATED
Capacitance @ Vr, F
10pF @ 10V 1MHz
Manufacturer
Microsemi
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Radiation Hardening
Yes
Package / Case
SQ-MELF, A
Manufacturer'S Part No.
1N6622US
Natural Thermal Resistance
13 °C/W
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
RoHS non-compliant
JESD-609 Code
e0
HTSUS
8541.10.0080
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Number Of Elements
1
Number Of Phases
1
Diode Element Material
SILICON
Diode Type
Standard
Operating Temperature - Junction
-65°C~150°C
Application
ULTRA FAST RECOVERY
Reverse Recovery Time
30 ns
Peak Reverse Current
500nA
Forward Voltage
1.6V
Peak Non-Repetitive Surge Current
20A
Voltage - Forward (Vf) (Max) @ If
1.4V @ 1.2A
Current - Reverse Leakage @ Vr
500nA @ 660V
Max Reverse Voltage (DC)
660V
Average Rectified Current
1.2A
Max Repetitive Reverse Voltage (Vrrm)
660V
Forward Current
1.2A

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What is 1N6622US?

1N6622US is a Diodes - Rectifiers - Single component from Microsemi. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for 1N6622US?

1N6622US is listed with package reference -. The current product description is DIODE GEN PURP 660V 1.2A A-MELF, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is 1N6622US available in stock?

This page currently shows 74092 units in stock and 30236 units available for 1N6622US. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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