Supply original IRF8788PBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 30V 24A 8-SO

RoHS
Datasheet
Supply original IRF8788PBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRF8788PBF

Internal code

TCE000078253

Package

SOIC

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET N-CH 30V 24A 8-SO

key Attributes

-

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Product overview

Overview

MOSFET N-CH 30V 24A 8-SO

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Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Turn On Delay Time

23 ns

Product Parameter

Rise Time

24ns

Product Parameter

Number Of Elements

1

Product Parameter

Dual Supply Voltage

30V

Product Parameter

Turn-Off Delay Time

23 ns

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Turn On Delay Time
23 ns
Rise Time
24ns
Number Of Elements
1
Dual Supply Voltage
30V
Turn-Off Delay Time
23 ns
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Packaging
Tube
Mounting Type
Surface Mount
Published
2005
Termination
SMD/SMT
Part Status
Discontinued
Terminal Position
DUAL
Terminal Form
GULL WING
Element Configuration
Single
Package / Case
8-SOIC (0.154, 3.90mm Width)
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Contact Plating
Tin
Radiation Hardening
No
Width
4mm
Height
1.5mm
Mount
Surface Mount
Length
5mm
Number Of Pins
8
Number Of Terminations
8
Power Dissipation
2.5W
Nominal Vgs
1.8 V
Threshold Voltage
1.8V
Gate To Source Voltage (Vgs)
20V
Power Dissipation-Max
2.5W Ta
Drain To Source Breakdown Voltage
30V
Fall Time (Typ)
11 ns
Continuous Drain Current (ID)
24A
Recovery Time
36 ns
Gate Charge (Qg) (Max) @ Vgs
66nC @ 4.5V
Resistance
2.8mOhm
Rds On (Max) @ Id, Vgs
2.8m Ω @ 24A, 10V
Avalanche Energy Rating (Eas)
230 mJ
Vgs(Th) (Max) @ Id
2.35V @ 100μA
Current - Continuous Drain (Id) @ 25°C
24A Ta
Manufacturer'S Part No.
IRF8788PBF
Input Capacitance (Ciss) (Max) @ Vds
5720pF @ 15V

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What is IRF8788PBF?

IRF8788PBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRF8788PBF?

IRF8788PBF is listed with package reference SOIC. The current product description is MOSFET N-CH 30V 24A 8-SO, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

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This page currently shows 83552 units in stock and 59469 units available for IRF8788PBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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