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DMG1012UW-7 Transistors - FETs, MOSFETs - Single by Diodes Incorporated

DMG1012UW-7 is a Transistors - FETs, MOSFETs - Single model from Diodes Incorporated, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to SOT323 under the Diodes Incorporated brand listing. MOSFET N-CH 20V 1A SOT323. TrustCompo combines the available model, brand, hierarchy, and specification details around DMG1012UW-7 so buyers can move faster from review to quotation.

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Datasheet
DMG1012UW-7 Transistors - FETs, MOSFETs - Single by Diodes Incorporated | TrustCompo
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Part Number

DMG1012UW-7

Internal code

TCE000077854

Package

SOT323

Key specifications

Series

-

Min Quantity

1

Description

MOSFET N-CH 20V 1A SOT323

key Attributes

-

Technical document

Open The Official Datasheet

Review the latest datasheet for DMG1012UW-7 from Diodes Incorporated in a separate tab so engineers and buyers can check package, electrical characteristics, and application details without leaving this product page.

View DMG1012UW-7 Datasheet

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RoHS, REACH, and lead-free documentation can be confirmed during RFQ
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Pre-shipment inspection report support for quality review

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Globally recognized certifications

4 certifications

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ISO 9001

Quality management processes for more consistent sourcing and handling.

AS9120B

Aerospace-focused distribution controls for traceability and reliability.

ISO 14001

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ESD Control

Electrostatic handling standards to help protect sensitive components.

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Product overview

Overview

The DMG1012UW-7 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Diodes Incorporated. This component is designed for use in various electronic applications, including power management, switching, and amplification.

Key Features:

  1. Type: N-channel MOSFET
  2. Package: The DMG1012UW-7 is typically housed in a compact SOT-23 package, which is a surface-mount technology (SMT) package that allows for efficient space utilization on printed circuit boards (PCBs).
  3. Voltage Rating: The device has a maximum drain-source voltage (V_DS) rating of 30V, making it suitable for low to moderate voltage applications.
  4. Current Rating: It can handle a continuous drain current (I_D) of up to 3.5A, which allows it to be used in applications requiring moderate power levels.
  5. R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.045 ohms at a gate-source voltage (V_GS) of 10V, which contributes to higher efficiency and lower heat generation during operation.
  6. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is in the range of 1V to 3V, allowing for easy drive with low-voltage control signals.
  7. Switching Speed: The DMG1012UW-7 features fast switching capabilities, making it suitable for high-frequency applications.
  8. Thermal Resistance: The device has a low thermal resistance, which helps in managing heat dissipation during operation.

Applications:

The DMG1012UW-7 is commonly used in various applications, including:

  • Power Management Circuits: Ideal for DC-DC converters and power supply circuits.
  • Load Switching: Can be used to switch loads on and off in various electronic devices.
  • Signal Switching: Suitable for applications requiring fast signal switching.
  • Motor Control: Can be utilized in driving small motors or actuators.

Electrical Characteristics:

  • Maximum Gate-Source Voltage (V_GS): ±20V
  • Maximum Power Dissipation (P_D): Typically around 1.5W, depending on the thermal management of the PCB.
  • Body Diode Characteristics: The DMG1012UW-7 includes an intrinsic body diode, which can conduct current in the reverse direction, useful in certain applications.

Conclusion:

The DMG1012UW-7 from Diodes Incorporated is a versatile and efficient N-channel MOSFET that is well-suited for a variety of electronic applications. Its compact size, low on-resistance, and fast switching capabilities make it an excellent choice for designers looking to optimize performance in power management and switching applications.

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Lead Free

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Published

2011

Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Published
2011
Factory Lead Time
14 Weeks
Packaging
Tape & Reel (TR)
Length
2.2mm
Width
1.35mm
Terminal Position
DUAL
Terminal Form
GULL WING
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Manufacturer
Diodes Incorporated
Additional Feature
HIGH RELIABILITY
Vgs(Th) (Max) @ Id
1V @ 250μA
Contact Plating
Tin
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
3
Pin Count
3
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Height
1mm
Number Of Terminations
3
Gate To Source Voltage (Vgs)
6V
Package / Case
SC-70, SOT-323
Drain Current-Max (Abs) (ID)
1A
Continuous Drain Current (ID)
1A
Power Dissipation
290mW
Weight
6.010099mg
Drain To Source Breakdown Voltage
20V
Vgs (Max)
±6V
Current - Continuous Drain (Id) @ 25°C
1A Ta
Fall Time (Typ)
12.3 ns
Drain-Source On Resistance-Max
0.45Ohm
Gate Charge (Qg) (Max) @ Vgs
0.74nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
60.67pF @ 16V
Rds On (Max) @ Id, Vgs
450m Ω @ 600mA, 4.5V
Power Dissipation-Max
290mW Ta
Manufacturer'S Part No.
DMG1012UW-7
Number Of Channels
1
Number Of Elements
1
Turn On Delay Time
5.1 ns
Rise Time
7.4ns
Turn-Off Delay Time
26.7 ns
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.21.0095
ECCN Code
EAR99

Common questions

Product FAQ

Quick answers for buyers reviewing DMG1012UW-7, stock, documentation, and sourcing steps.

What is DMG1012UW-7?

DMG1012UW-7 is a Transistors - FETs, MOSFETs - Single component from Diodes Incorporated. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for DMG1012UW-7?

DMG1012UW-7 is listed with package reference SOT323. The current product description is MOSFET N-CH 20V 1A SOT323, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is DMG1012UW-7 available in stock?

This page currently shows 43307 units in stock and 10694 units available for DMG1012UW-7. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for DMG1012UW-7?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for DMG1012UW-7 by Diodes Incorporated. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for DMG1012UW-7?

Yes. This page links to the datasheet for DMG1012UW-7 by Diodes Incorporated, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify DMG1012UW-7 before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for DMG1012UW-7 before approving the order.

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